On occupation functions of donor- and acceptor-like interface states in metal-insulator-semiconductor tunnel structures

C. Y. Chang, Shui-Jinn Wang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This paper presents a theoretical study on the occupation functions of interface states in MIS tunnel structures. Based on Shockley-Read-Hall (SRH) statistics and considering carriers tunneling between the metal and interface states, occupation functions of both donor- and acceptor-like interface states at arbitrary energy level within the semiconductor band gap are derived and analyzed. It reveals that, for the same energy level, the occupation functions of donor-like and acceptor-like interface states are remarkably different in magnitude. The deviation in occupation functions of these two types of interface states is a nonlinear function of the ratio of capture cross-section of the charge states to that of the neutral states (CC/CN) and the semiconductor surface conditions. If the insulating layer (SiO2) is relatively thick (> 50 Å) or thin (< 10 Å), interface states are in equilibrium with the semiconductor or the metal, respectively. Under the circumstances, the occupation functions of the two types of interface states are no longer distinguishable. Alternatively, they can be approximated by the well-known Fermi-Dirac distribution function. In this paper, quantitative influences of key parameters of MIS tunnel structures such as insulating layer thickness, electron and hole density at the semiconductor surface, capture cross-sections for charged and neutral states, etc., on interface states occupation function are discussed. For Gaussian-distributed donor- and acceptor-like interface states, the quantitative roles of interface states in charge storage and current-assisting effects are also demonstrated.

Original languageEnglish
Pages (from-to)1181-1191
Number of pages11
JournalSolid State Electronics
Volume28
Issue number12
DOIs
Publication statusPublished - 1985 Jan 1

Fingerprint

Interface states
MIS (semiconductors)
occupation
tunnels
Tunnels
Metals
Semiconductor materials
Management information systems
absorption cross sections
Electron energy levels
energy levels
metals
Distribution functions
Energy gap
distribution functions
Statistics
statistics
deviation
Electrons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{ee44033ed41f45cca8c6d79e619b2b78,
title = "On occupation functions of donor- and acceptor-like interface states in metal-insulator-semiconductor tunnel structures",
abstract = "This paper presents a theoretical study on the occupation functions of interface states in MIS tunnel structures. Based on Shockley-Read-Hall (SRH) statistics and considering carriers tunneling between the metal and interface states, occupation functions of both donor- and acceptor-like interface states at arbitrary energy level within the semiconductor band gap are derived and analyzed. It reveals that, for the same energy level, the occupation functions of donor-like and acceptor-like interface states are remarkably different in magnitude. The deviation in occupation functions of these two types of interface states is a nonlinear function of the ratio of capture cross-section of the charge states to that of the neutral states (CC/CN) and the semiconductor surface conditions. If the insulating layer (SiO2) is relatively thick (> 50 {\AA}) or thin (< 10 {\AA}), interface states are in equilibrium with the semiconductor or the metal, respectively. Under the circumstances, the occupation functions of the two types of interface states are no longer distinguishable. Alternatively, they can be approximated by the well-known Fermi-Dirac distribution function. In this paper, quantitative influences of key parameters of MIS tunnel structures such as insulating layer thickness, electron and hole density at the semiconductor surface, capture cross-sections for charged and neutral states, etc., on interface states occupation function are discussed. For Gaussian-distributed donor- and acceptor-like interface states, the quantitative roles of interface states in charge storage and current-assisting effects are also demonstrated.",
author = "Chang, {C. Y.} and Shui-Jinn Wang",
year = "1985",
month = "1",
day = "1",
doi = "10.1016/0038-1101(85)90041-3",
language = "English",
volume = "28",
pages = "1181--1191",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "12",

}

On occupation functions of donor- and acceptor-like interface states in metal-insulator-semiconductor tunnel structures. / Chang, C. Y.; Wang, Shui-Jinn.

In: Solid State Electronics, Vol. 28, No. 12, 01.01.1985, p. 1181-1191.

Research output: Contribution to journalArticle

TY - JOUR

T1 - On occupation functions of donor- and acceptor-like interface states in metal-insulator-semiconductor tunnel structures

AU - Chang, C. Y.

AU - Wang, Shui-Jinn

PY - 1985/1/1

Y1 - 1985/1/1

N2 - This paper presents a theoretical study on the occupation functions of interface states in MIS tunnel structures. Based on Shockley-Read-Hall (SRH) statistics and considering carriers tunneling between the metal and interface states, occupation functions of both donor- and acceptor-like interface states at arbitrary energy level within the semiconductor band gap are derived and analyzed. It reveals that, for the same energy level, the occupation functions of donor-like and acceptor-like interface states are remarkably different in magnitude. The deviation in occupation functions of these two types of interface states is a nonlinear function of the ratio of capture cross-section of the charge states to that of the neutral states (CC/CN) and the semiconductor surface conditions. If the insulating layer (SiO2) is relatively thick (> 50 Å) or thin (< 10 Å), interface states are in equilibrium with the semiconductor or the metal, respectively. Under the circumstances, the occupation functions of the two types of interface states are no longer distinguishable. Alternatively, they can be approximated by the well-known Fermi-Dirac distribution function. In this paper, quantitative influences of key parameters of MIS tunnel structures such as insulating layer thickness, electron and hole density at the semiconductor surface, capture cross-sections for charged and neutral states, etc., on interface states occupation function are discussed. For Gaussian-distributed donor- and acceptor-like interface states, the quantitative roles of interface states in charge storage and current-assisting effects are also demonstrated.

AB - This paper presents a theoretical study on the occupation functions of interface states in MIS tunnel structures. Based on Shockley-Read-Hall (SRH) statistics and considering carriers tunneling between the metal and interface states, occupation functions of both donor- and acceptor-like interface states at arbitrary energy level within the semiconductor band gap are derived and analyzed. It reveals that, for the same energy level, the occupation functions of donor-like and acceptor-like interface states are remarkably different in magnitude. The deviation in occupation functions of these two types of interface states is a nonlinear function of the ratio of capture cross-section of the charge states to that of the neutral states (CC/CN) and the semiconductor surface conditions. If the insulating layer (SiO2) is relatively thick (> 50 Å) or thin (< 10 Å), interface states are in equilibrium with the semiconductor or the metal, respectively. Under the circumstances, the occupation functions of the two types of interface states are no longer distinguishable. Alternatively, they can be approximated by the well-known Fermi-Dirac distribution function. In this paper, quantitative influences of key parameters of MIS tunnel structures such as insulating layer thickness, electron and hole density at the semiconductor surface, capture cross-sections for charged and neutral states, etc., on interface states occupation function are discussed. For Gaussian-distributed donor- and acceptor-like interface states, the quantitative roles of interface states in charge storage and current-assisting effects are also demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0022195527&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022195527&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(85)90041-3

DO - 10.1016/0038-1101(85)90041-3

M3 - Article

VL - 28

SP - 1181

EP - 1191

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 12

ER -