On-resistance degradation induced by hot-carrier injection in LDMOS transistors with STI in the drift region

Jone F. Chen, Kuen Shiuan Tian, Shiang Yu Chen, Kuo Ming Wu, C. M. Liu

Research output: Contribution to journalArticlepeer-review

69 Citations (Scopus)

Abstract

In this letter, on-resistance (Ron) degradation induced by hot-carrier injection in n-type lateral DMOS transistors with shallow-trench isolation (STI) in the drift region is investigated. Ron decreases at the beginning of stress, but Ron increases as the stress time is increased. Experimental data and technology computer-aided-design simulation results reveal that hot-hole injection and trapping at the STI corner closest to the channel are responsible for the Ron reduction. The damage caused by hot-electron injection at the STI edge closest to the drain is responsible for the Ron increase.

Original languageEnglish
Pages (from-to)1071-1073
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number9
DOIs
Publication statusPublished - 2008 Sep 5

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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