On-resistance degradation induced by hot-carrier injection in LDMOS transistors with STI in the drift region

Jone F. Chen; Kuen Shiuan Tian; Shiang Yu Chen; Kuo Ming Wu; C. M. Liu

doi:10.1109/LED.2008.2001969

On-resistance degradation induced by hot-carrier injection in LDMOS transistors with STI in the drift region

Jone F. Chen, Kuen Shiuan Tian, Shiang Yu Chen, Kuo Ming Wu, C. M. Liu

Research output: Contribution to journal › Article › peer-review

77 Citations (Scopus)

Abstract

In this letter, on-resistance (R_on) degradation induced by hot-carrier injection in n-type lateral DMOS transistors with shallow-trench isolation (STI) in the drift region is investigated. R_on decreases at the beginning of stress, but R_on increases as the stress time is increased. Experimental data and technology computer-aided-design simulation results reveal that hot-hole injection and trapping at the STI corner closest to the channel are responsible for the R_on reduction. The damage caused by hot-electron injection at the STI edge closest to the drain is responsible for the R_on increase.

Original language	English
Pages (from-to)	1071-1073
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	9
DOIs	https://doi.org/10.1109/LED.2008.2001969
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2008.2001969

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title = "On-resistance degradation induced by hot-carrier injection in LDMOS transistors with STI in the drift region",

abstract = "In this letter, on-resistance (Ron) degradation induced by hot-carrier injection in n-type lateral DMOS transistors with shallow-trench isolation (STI) in the drift region is investigated. Ron decreases at the beginning of stress, but Ron increases as the stress time is increased. Experimental data and technology computer-aided-design simulation results reveal that hot-hole injection and trapping at the STI corner closest to the channel are responsible for the Ron reduction. The damage caused by hot-electron injection at the STI edge closest to the drain is responsible for the Ron increase.",

author = "Chen, {Jone F.} and Tian, {Kuen Shiuan} and Chen, {Shiang Yu} and Wu, {Kuo Ming} and Liu, {C. M.}",

note = "Funding Information: Manuscript received May 5, 2008; revised June 11, 2008. This work was supported by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan, under Grant D97-2700. The review of this letter was arranged by Editor S.-H. Ryu.",

year = "2008",

doi = "10.1109/LED.2008.2001969",

language = "English",

volume = "29",

pages = "1071--1073",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - On-resistance degradation induced by hot-carrier injection in LDMOS transistors with STI in the drift region

AU - Chen, Jone F.

AU - Tian, Kuen Shiuan

AU - Chen, Shiang Yu

AU - Wu, Kuo Ming

AU - Liu, C. M.

N1 - Funding Information: Manuscript received May 5, 2008; revised June 11, 2008. This work was supported by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan, under Grant D97-2700. The review of this letter was arranged by Editor S.-H. Ryu.

PY - 2008

Y1 - 2008

N2 - In this letter, on-resistance (Ron) degradation induced by hot-carrier injection in n-type lateral DMOS transistors with shallow-trench isolation (STI) in the drift region is investigated. Ron decreases at the beginning of stress, but Ron increases as the stress time is increased. Experimental data and technology computer-aided-design simulation results reveal that hot-hole injection and trapping at the STI corner closest to the channel are responsible for the Ron reduction. The damage caused by hot-electron injection at the STI edge closest to the drain is responsible for the Ron increase.

AB - In this letter, on-resistance (Ron) degradation induced by hot-carrier injection in n-type lateral DMOS transistors with shallow-trench isolation (STI) in the drift region is investigated. Ron decreases at the beginning of stress, but Ron increases as the stress time is increased. Experimental data and technology computer-aided-design simulation results reveal that hot-hole injection and trapping at the STI corner closest to the channel are responsible for the Ron reduction. The damage caused by hot-electron injection at the STI edge closest to the drain is responsible for the Ron increase.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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On-resistance degradation induced by hot-carrier injection in LDMOS transistors with STI in the drift region

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