On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)

Wen-Chau Liu, S. Y. Cheng, H. J. Pan, S. C. Feng, K. H. Yu, J. H. Yan

Research output: Contribution to conferencePaper

Abstract

A new AlInAs/GaInAs superlatticed negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR is resulted mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.

Original languageEnglish
Pages249-251
Number of pages3
Publication statusPublished - 1999 Jan 1
EventProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust
Duration: 1998 Dec 141998 Dec 16

Other

OtherProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
CityPerth, WA, Aust
Period98-12-1498-12-16

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Resonant tunneling
Transistors
Switches
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Liu, W-C., Cheng, S. Y., Pan, H. J., Feng, S. C., Yu, K. H., & Yan, J. H. (1999). On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT). 249-251. Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .
Liu, Wen-Chau ; Cheng, S. Y. ; Pan, H. J. ; Feng, S. C. ; Yu, K. H. ; Yan, J. H. / On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT). Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .3 p.
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title = "On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)",
abstract = "A new AlInAs/GaInAs superlatticed negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR is resulted mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.",
author = "Wen-Chau Liu and Cheng, {S. Y.} and Pan, {H. J.} and Feng, {S. C.} and Yu, {K. H.} and Yan, {J. H.}",
year = "1999",
month = "1",
day = "1",
language = "English",
pages = "249--251",
note = "Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 14-12-1998 Through 16-12-1998",

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Liu, W-C, Cheng, SY, Pan, HJ, Feng, SC, Yu, KH & Yan, JH 1999, 'On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)' Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, 98-12-14 - 98-12-16, pp. 249-251.

On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT). / Liu, Wen-Chau; Cheng, S. Y.; Pan, H. J.; Feng, S. C.; Yu, K. H.; Yan, J. H.

1999. 249-251 Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)

AU - Liu, Wen-Chau

AU - Cheng, S. Y.

AU - Pan, H. J.

AU - Feng, S. C.

AU - Yu, K. H.

AU - Yan, J. H.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - A new AlInAs/GaInAs superlatticed negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR is resulted mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.

AB - A new AlInAs/GaInAs superlatticed negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR is resulted mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.

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M3 - Paper

SP - 249

EP - 251

ER -

Liu W-C, Cheng SY, Pan HJ, Feng SC, Yu KH, Yan JH. On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT). 1999. Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .