On the Ammonia Gas Sensing Performance of a RF Sputtered NiO Thin-Film Sensor

Po Cheng Chou, Huey-Ing Chen, I-Ping Liu, Chun Chia Chen, Jian Kai Liou, Kai Siang Hsu, Wen-Chau Liu

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

An interesting ammonia gas sensor based on a p-type NiO thin film, prepared by a radio frequency sputtering process, is studied and demonstrated. As compared with conventional n-type metal-oxide sensors, the studied device shows comparable and good sensing performance, including a high-sensing response ratio of 289%, a lower response time of 31 s, and a lower recovery time of 78 s, under an introduced 1000 ppm NH3/air gas at 250 °C and 350 °C, respectively. In addition, the studied sensor device exhibits a lower detection limit (<5 ppm NH3/air) at 250 °C. Consequently, based on these advantages and inherent benefits of low cost, chemical stability, and easy fabrication, etc., the studied NiO thin-film sensor shows the promise for high-performance ammonia gas sensing applications.

Original languageEnglish
Article number7053906
Pages (from-to)3711-3715
Number of pages5
JournalIEEE Sensors Journal
Volume15
Issue number7
DOIs
Publication statusPublished - 2015 Jul 1

Fingerprint

ammonia
Ammonia
Thin films
sensors
Sensors
thin films
Gases
gases
Chemical stability
Air
Chemical sensors
Sputtering
air
metal oxides
Fabrication
Recovery
radio frequencies
Oxides
sputtering
recovery

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

Cite this

Chou, Po Cheng ; Chen, Huey-Ing ; Liu, I-Ping ; Chen, Chun Chia ; Liou, Jian Kai ; Hsu, Kai Siang ; Liu, Wen-Chau. / On the Ammonia Gas Sensing Performance of a RF Sputtered NiO Thin-Film Sensor. In: IEEE Sensors Journal. 2015 ; Vol. 15, No. 7. pp. 3711-3715.
@article{c8401deb85fd4d98b6e5161b50a53776,
title = "On the Ammonia Gas Sensing Performance of a RF Sputtered NiO Thin-Film Sensor",
abstract = "An interesting ammonia gas sensor based on a p-type NiO thin film, prepared by a radio frequency sputtering process, is studied and demonstrated. As compared with conventional n-type metal-oxide sensors, the studied device shows comparable and good sensing performance, including a high-sensing response ratio of 289{\%}, a lower response time of 31 s, and a lower recovery time of 78 s, under an introduced 1000 ppm NH3/air gas at 250 °C and 350 °C, respectively. In addition, the studied sensor device exhibits a lower detection limit (<5 ppm NH3/air) at 250 °C. Consequently, based on these advantages and inherent benefits of low cost, chemical stability, and easy fabrication, etc., the studied NiO thin-film sensor shows the promise for high-performance ammonia gas sensing applications.",
author = "Chou, {Po Cheng} and Huey-Ing Chen and I-Ping Liu and Chen, {Chun Chia} and Liou, {Jian Kai} and Hsu, {Kai Siang} and Wen-Chau Liu",
year = "2015",
month = "7",
day = "1",
doi = "10.1109/JSEN.2015.2391286",
language = "English",
volume = "15",
pages = "3711--3715",
journal = "IEEE Sensors Journal",
issn = "1530-437X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

On the Ammonia Gas Sensing Performance of a RF Sputtered NiO Thin-Film Sensor. / Chou, Po Cheng; Chen, Huey-Ing; Liu, I-Ping; Chen, Chun Chia; Liou, Jian Kai; Hsu, Kai Siang; Liu, Wen-Chau.

In: IEEE Sensors Journal, Vol. 15, No. 7, 7053906, 01.07.2015, p. 3711-3715.

Research output: Contribution to journalArticle

TY - JOUR

T1 - On the Ammonia Gas Sensing Performance of a RF Sputtered NiO Thin-Film Sensor

AU - Chou, Po Cheng

AU - Chen, Huey-Ing

AU - Liu, I-Ping

AU - Chen, Chun Chia

AU - Liou, Jian Kai

AU - Hsu, Kai Siang

AU - Liu, Wen-Chau

PY - 2015/7/1

Y1 - 2015/7/1

N2 - An interesting ammonia gas sensor based on a p-type NiO thin film, prepared by a radio frequency sputtering process, is studied and demonstrated. As compared with conventional n-type metal-oxide sensors, the studied device shows comparable and good sensing performance, including a high-sensing response ratio of 289%, a lower response time of 31 s, and a lower recovery time of 78 s, under an introduced 1000 ppm NH3/air gas at 250 °C and 350 °C, respectively. In addition, the studied sensor device exhibits a lower detection limit (<5 ppm NH3/air) at 250 °C. Consequently, based on these advantages and inherent benefits of low cost, chemical stability, and easy fabrication, etc., the studied NiO thin-film sensor shows the promise for high-performance ammonia gas sensing applications.

AB - An interesting ammonia gas sensor based on a p-type NiO thin film, prepared by a radio frequency sputtering process, is studied and demonstrated. As compared with conventional n-type metal-oxide sensors, the studied device shows comparable and good sensing performance, including a high-sensing response ratio of 289%, a lower response time of 31 s, and a lower recovery time of 78 s, under an introduced 1000 ppm NH3/air gas at 250 °C and 350 °C, respectively. In addition, the studied sensor device exhibits a lower detection limit (<5 ppm NH3/air) at 250 °C. Consequently, based on these advantages and inherent benefits of low cost, chemical stability, and easy fabrication, etc., the studied NiO thin-film sensor shows the promise for high-performance ammonia gas sensing applications.

UR - http://www.scopus.com/inward/record.url?scp=84929414896&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84929414896&partnerID=8YFLogxK

U2 - 10.1109/JSEN.2015.2391286

DO - 10.1109/JSEN.2015.2391286

M3 - Article

VL - 15

SP - 3711

EP - 3715

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

SN - 1530-437X

IS - 7

M1 - 7053906

ER -