On the ammonia sensing performance and transmission approach of a platinum/Nickel Oxide/GaN-Based metal-oxide-semiconductor diode

I. Ping Liu; Ching Hong Chang; Yen Ming Huang; Kun Wei Lin

doi:10.1109/JEDS.2019.2908419

On the ammonia sensing performance and transmission approach of a platinum/Nickel Oxide/GaN-Based metal-oxide-semiconductor diode

I. Ping Liu, Ching Hong Chang, Yen Ming Huang, Kun Wei Lin

Department of Chemical Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

New platinum (Pt)/nickel oxide (NiO)/GaN-based metal-oxide-semiconductor (MOS) diode-type ammonia sensor was fabricated and studied. In addition, a new grey polynomial differential recovery (GPDR) model was developed for the application of data transmission. The studied Pt/NiO/GaN-based MOS diode shows good ammonia sensing performance at relatively high temperatures (≥ 423 K). A very high sensing response of 244.2 under 1000 ppm NH₃/air gas and a low detecting level of 2 ppm NH₃/air are obtained at 423 K. The studied device also shows operating flexibility in the applied forward and reverse voltages, and good reversibility in ammonia sensing. In order to expand the practical application of ammonia sensing, a GPDR model was developed to effectively reduce data redundancy by 64.22% and achieve a recovery rate of 99.79% compared with the original data. Therefore, the studied sensor device provides promise for ammonia sensing applications.

Original language	English
Article number	8681536
Pages (from-to)	476-482
Number of pages	7
Journal	IEEE Journal of the Electron Devices Society
Volume	7
DOIs	https://doi.org/10.1109/JEDS.2019.2908419
Publication status	Published - 2019

All Science Journal Classification (ASJC) codes

Biotechnology
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/JEDS.2019.2908419

Cite this

@article{4ec6c7bfe55b4206ab6d6f9e8acee4cd,

title = "On the ammonia sensing performance and transmission approach of a platinum/Nickel Oxide/GaN-Based metal-oxide-semiconductor diode",

abstract = "New platinum (Pt)/nickel oxide (NiO)/GaN-based metal-oxide-semiconductor (MOS) diode-type ammonia sensor was fabricated and studied. In addition, a new grey polynomial differential recovery (GPDR) model was developed for the application of data transmission. The studied Pt/NiO/GaN-based MOS diode shows good ammonia sensing performance at relatively high temperatures (≥ 423 K). A very high sensing response of 244.2 under 1000 ppm NH3/air gas and a low detecting level of 2 ppm NH3/air are obtained at 423 K. The studied device also shows operating flexibility in the applied forward and reverse voltages, and good reversibility in ammonia sensing. In order to expand the practical application of ammonia sensing, a GPDR model was developed to effectively reduce data redundancy by 64.22% and achieve a recovery rate of 99.79% compared with the original data. Therefore, the studied sensor device provides promise for ammonia sensing applications.",

author = "Liu, {I. Ping} and Chang, {Ching Hong} and Huang, {Yen Ming} and Lin, {Kun Wei}",

note = "Funding Information: This work was supported in part by the Chaoyang University of Technology (CYUT) and Higher Education Sprout Project, Ministry of Education, Taiwan, through the Project “The Research and Development and the Cultivation of Talent for Health-Enhancement Products.” Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2019",

doi = "10.1109/JEDS.2019.2908419",

language = "English",

volume = "7",

pages = "476--482",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - On the ammonia sensing performance and transmission approach of a platinum/Nickel Oxide/GaN-Based metal-oxide-semiconductor diode

AU - Liu, I. Ping

AU - Chang, Ching Hong

AU - Huang, Yen Ming

AU - Lin, Kun Wei

N1 - Funding Information: This work was supported in part by the Chaoyang University of Technology (CYUT) and Higher Education Sprout Project, Ministry of Education, Taiwan, through the Project “The Research and Development and the Cultivation of Talent for Health-Enhancement Products.” Publisher Copyright: © 2013 IEEE.

PY - 2019

Y1 - 2019

N2 - New platinum (Pt)/nickel oxide (NiO)/GaN-based metal-oxide-semiconductor (MOS) diode-type ammonia sensor was fabricated and studied. In addition, a new grey polynomial differential recovery (GPDR) model was developed for the application of data transmission. The studied Pt/NiO/GaN-based MOS diode shows good ammonia sensing performance at relatively high temperatures (≥ 423 K). A very high sensing response of 244.2 under 1000 ppm NH3/air gas and a low detecting level of 2 ppm NH3/air are obtained at 423 K. The studied device also shows operating flexibility in the applied forward and reverse voltages, and good reversibility in ammonia sensing. In order to expand the practical application of ammonia sensing, a GPDR model was developed to effectively reduce data redundancy by 64.22% and achieve a recovery rate of 99.79% compared with the original data. Therefore, the studied sensor device provides promise for ammonia sensing applications.

AB - New platinum (Pt)/nickel oxide (NiO)/GaN-based metal-oxide-semiconductor (MOS) diode-type ammonia sensor was fabricated and studied. In addition, a new grey polynomial differential recovery (GPDR) model was developed for the application of data transmission. The studied Pt/NiO/GaN-based MOS diode shows good ammonia sensing performance at relatively high temperatures (≥ 423 K). A very high sensing response of 244.2 under 1000 ppm NH3/air gas and a low detecting level of 2 ppm NH3/air are obtained at 423 K. The studied device also shows operating flexibility in the applied forward and reverse voltages, and good reversibility in ammonia sensing. In order to expand the practical application of ammonia sensing, a GPDR model was developed to effectively reduce data redundancy by 64.22% and achieve a recovery rate of 99.79% compared with the original data. Therefore, the studied sensor device provides promise for ammonia sensing applications.

UR - http://www.scopus.com/inward/record.url?scp=85065048819&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85065048819&partnerID=8YFLogxK

U2 - 10.1109/JEDS.2019.2908419

DO - 10.1109/JEDS.2019.2908419

M3 - Article

AN - SCOPUS:85065048819

SN - 2168-6734

VL - 7

SP - 476

EP - 482

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

M1 - 8681536

ER -

On the ammonia sensing performance and transmission approach of a platinum/Nickel Oxide/GaN-Based metal-oxide-semiconductor diode

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this