On the ammonia sensing performance and transmission approach of a platinum/Nickel Oxide/GaN-Based metal-oxide-semiconductor diode

I. Ping Liu, Ching Hong Chang, Yen Ming Huang, Kun Wei Lin

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

New platinum (Pt)/nickel oxide (NiO)/GaN-based metal-oxide-semiconductor (MOS) diode-type ammonia sensor was fabricated and studied. In addition, a new grey polynomial differential recovery (GPDR) model was developed for the application of data transmission. The studied Pt/NiO/GaN-based MOS diode shows good ammonia sensing performance at relatively high temperatures (≥ 423 K). A very high sensing response of 244.2 under 1000 ppm NH3/air gas and a low detecting level of 2 ppm NH3/air are obtained at 423 K. The studied device also shows operating flexibility in the applied forward and reverse voltages, and good reversibility in ammonia sensing. In order to expand the practical application of ammonia sensing, a GPDR model was developed to effectively reduce data redundancy by 64.22% and achieve a recovery rate of 99.79% compared with the original data. Therefore, the studied sensor device provides promise for ammonia sensing applications.

Original languageEnglish
Article number8681536
Pages (from-to)476-482
Number of pages7
JournalIEEE Journal of the Electron Devices Society
Volume7
DOIs
Publication statusPublished - 2019

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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