On the carrier concentration and Hall mobility in GaN epilayers

Chih Hsin Ko; Shoou Jinn Chang; Yan Kuin Su; Wen How Lan; Jone F. Chen; Ta Ming Kuan; Yao Cong Huang; Chung I. Chiang; Jim Webb; Wen Jen Lin

doi:10.1143/jjap.41.l226

On the carrier concentration and Hall mobility in GaN epilayers

Chih Hsin Ko, Shoou Jinn Chang, Yan Kuin Su, Wen How Lan, Jone F. Chen, Ta Ming Kuan, Yao Cong Huang, Chung I. Chiang, Jim Webb, Wen Jen Lin

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The dependence of Hall mobility and carrier concentration in GaN epilayers on light illumination was examined. It was found that Hall mobility and electron concentration both increased after illumination with red laser (632.8 nm) and green laser (530 nm). However, no changes in Hall mobility and carrier concentration were found, if IR-laser (850 nm) was used. The results reveal that deep-level defects were excited and hence extra carriers were generated by light illumination. The influence is more pronounced for thinner films. These observations indicate that donor-like defect-related states were located 1.48 to 2.33 eV below the conduction band edge.

Original language	English
Pages (from-to)	L226-L228
Journal	Japanese Journal of Applied Physics
Volume	41
Issue number	3 A
DOIs	https://doi.org/10.1143/jjap.41.l226
Publication status	Published - 2002 Mar 1

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

Access to Document

10.1143/jjap.41.l226

Cite this

@article{9b300e0b10224f66b01a5dd06d4281ad,

title = "On the carrier concentration and Hall mobility in GaN epilayers",

abstract = "The dependence of Hall mobility and carrier concentration in GaN epilayers on light illumination was examined. It was found that Hall mobility and electron concentration both increased after illumination with red laser (632.8 nm) and green laser (530 nm). However, no changes in Hall mobility and carrier concentration were found, if IR-laser (850 nm) was used. The results reveal that deep-level defects were excited and hence extra carriers were generated by light illumination. The influence is more pronounced for thinner films. These observations indicate that donor-like defect-related states were located 1.48 to 2.33 eV below the conduction band edge.",

author = "Ko, {Chih Hsin} and Chang, {Shoou Jinn} and Su, {Yan Kuin} and Lan, {Wen How} and Chen, {Jone F.} and Kuan, {Ta Ming} and Huang, {Yao Cong} and Chiang, {Chung I.} and Jim Webb and Lin, {Wen Jen}",

year = "2002",

month = mar,

day = "1",

doi = "10.1143/jjap.41.l226",

language = "English",

volume = "41",

pages = "L226--L228",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "3 A",

}

TY - JOUR

T1 - On the carrier concentration and Hall mobility in GaN epilayers

AU - Ko, Chih Hsin

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Lan, Wen How

AU - Chen, Jone F.

AU - Kuan, Ta Ming

AU - Huang, Yao Cong

AU - Chiang, Chung I.

AU - Webb, Jim

AU - Lin, Wen Jen

PY - 2002/3/1

Y1 - 2002/3/1

N2 - The dependence of Hall mobility and carrier concentration in GaN epilayers on light illumination was examined. It was found that Hall mobility and electron concentration both increased after illumination with red laser (632.8 nm) and green laser (530 nm). However, no changes in Hall mobility and carrier concentration were found, if IR-laser (850 nm) was used. The results reveal that deep-level defects were excited and hence extra carriers were generated by light illumination. The influence is more pronounced for thinner films. These observations indicate that donor-like defect-related states were located 1.48 to 2.33 eV below the conduction band edge.

AB - The dependence of Hall mobility and carrier concentration in GaN epilayers on light illumination was examined. It was found that Hall mobility and electron concentration both increased after illumination with red laser (632.8 nm) and green laser (530 nm). However, no changes in Hall mobility and carrier concentration were found, if IR-laser (850 nm) was used. The results reveal that deep-level defects were excited and hence extra carriers were generated by light illumination. The influence is more pronounced for thinner films. These observations indicate that donor-like defect-related states were located 1.48 to 2.33 eV below the conduction band edge.

UR - http://www.scopus.com/inward/record.url?scp=17544392720&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17544392720&partnerID=8YFLogxK

U2 - 10.1143/jjap.41.l226

DO - 10.1143/jjap.41.l226

M3 - Article

AN - SCOPUS:17544392720

SN - 0021-4922

VL - 41

SP - L226-L228

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 3 A

ER -

On the carrier concentration and Hall mobility in GaN epilayers

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this