On the emitter ledge length effect for InGaP/GaAs heterojunction bipolar transistors

Ssu I. Fu, Shiou Ying Cheng, Po Hsien Lai, Yan Ying Tsai, Ching Wen Hung, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The emitter ledge length effect on the performance of InGaP/GaAs heterojunction bipolar transistors is comprehensively studied. It is shown that the undesired potential saddle point at the edge of emitter ledge is substantially presented. At the saddle point, the electron density and recombination rate are decreased with increasing the emitter ledge length. However, the longer emitter ledge length increases the base-collector junction area which in turn deteriorates the high frequency performance. Therefore, the length of emitter ledge should be carefully considered. Based on the theoretical analysis and experimental results, the optimum emitter ledge length is near 0.8 μm.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number1-3
DOIs
Publication statusPublished - 2007 Jan 12

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'On the emitter ledge length effect for InGaP/GaAs heterojunction bipolar transistors'. Together they form a unique fingerprint.

Cite this