The high-performance n+-GaAs/p+-InGaP/n-GaAs high-barrier gate camel-like HFETs are successfully fabricated and demonstrated. The p+-InGaP layer is introduced to increase the barrier height and carrier confinement. Experimentally, good DC and AC device performances are obtained. For the studied 1×100 μm2 device A (B), a gate-drain turn-on voltage of 1.6 (1.2) V, gate-drain breakdown voltage over 40 V with low leakage current of 400 (37) μA/mm, drain-source off-state breakdown voltage of 38 (39.7) V, maximum transconductance gm,max of 145 (147) mS/mm, unity current gain cut-off frequency fT of 17 (15) GHz, and maximum oscillation frequency fmax of 33 (28) GHz are obtained, respectively, at room temperature. Moreover, the studied devices also show significantly wide and flat IDS operation regimes of gm, fT and fmax.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry