On the high-performance n⁺ - GaAs/p⁺ -InGaP/n-GaAs high-barrier gate camel-like HFETs

The high-performance n⁺-GaAs/p⁺-InGaP/n-GaAs high-barrier gate camel-like HFETs are successfully fabricated and demonstrated. The p⁺-InGaP layer is introduced to increase the barrier height and carrier confinement. Experimentally, good DC and AC device performances are obtained. For the studied 1×100 μm² device A (B), a gate-drain turn-on voltage of 1.6 (1.2) V, gate-drain breakdown voltage over 40 V with low leakage current of 400 (37) μA/mm, drain-source off-state breakdown voltage of 38 (39.7) V, maximum transconductance g_m,max of 145 (147) mS/mm, unity current gain cut-off frequency f_T of 17 (15) GHz, and maximum oscillation frequency f_max of 33 (28) GHz are obtained, respectively, at room temperature. Moreover, the studied devices also show significantly wide and flat I_DS operation regimes of g_m, f_T and f_max.