On the high-performance Ti-salicide ULSI CMOS devices prepared by a borderless contact technique and double-implant structure

Kong Beng Thei, Hung Ming Chuang, Kuo Hui Yu, Wen Chau Liu, Rong Chau Liu, Kun Wei Lin, Chi Wen Su, Chin Shiung Ho, Shou Gwo Wuu, Chung Shu Wang

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