On the hydrogen sensing behaviors of an InAlAs-based schottky diode with a thin Pt catalytic metal

Chih Hung Yen, Ching Wen Hung, Huey Ing Chen, Tsung Han Tsai, Tzu Pin Chen, Li Yang Chen, Kuei Yi Chu, Wen Chau Liu

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5 Citations (Scopus)

Abstract

A hydrogen sensor based on a Pt/In0.52Al0.48As Schottky diode with a thin (50 Å) Pt catalytic metal is studied and presented. Because of the inherent properties of Pt (high work function) and In0.52Al0.48As (large bandgap), the studied device demonstrates considerable benefits including low hydrogen gas detection limit (<14ppm H2/air), high sensitivity (1974% under 9970ppm H 2/air gas), wide operating temperature range (≥ 160°C), fast response time (≤4s), and widespread reverse voltage operating regime (-0.5 to -5 V). In addition, surface morphology and piezoelectric effect play key roles in the hydrogen sensing performance. Compared with similar devices with thicker (100 Å) Pt metal, the studied sensor device exhibits a higher hydrogen detection sensitivity under lower hydrogen concentration (≤1000 ppm H 2/air) environments.

Original languageEnglish
Pages (from-to)2862-2864
Number of pages3
JournalJapanese journal of applied physics
Volume47
Issue number4 PART 2
DOIs
Publication statusPublished - 2008 Apr 25

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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    Yen, C. H., Hung, C. W., Chen, H. I., Tsai, T. H., Chen, T. P., Chen, L. Y., Chu, K. Y., & Liu, W. C. (2008). On the hydrogen sensing behaviors of an InAlAs-based schottky diode with a thin Pt catalytic metal. Japanese journal of applied physics, 47(4 PART 2), 2862-2864. https://doi.org/10.1143/JJAP.47.2862