On the hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)

Chi Shiang Hsu, Huey-Ing Chen, Chung Fu Chang, Tai You Chen, Chien Chang Huang, Po Cheng Chou, Wen-Chau Liu

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The interesting temperature-dependent hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET) are studied and demonstrated. Remarkable hydrogen sensing performance is found at a very low concentration of hydrogen gases (≤1 ppm H 2/air). In addition, a good transistor switching behavior with the high drain current on/off value of 93,680 is obtained for 1% ppm H 2/air gas at 523 K. The fast transient response as comparable with a Schottky-type hydrogen sensor is also observed. Based on these advantages, the studied device shows a promise for high-performance, high-temperature electronics, and micro electro-mechanical system (MEMS) applications.

Original languageEnglish
Pages (from-to)19-23
Number of pages5
JournalSensors and Actuators, B: Chemical
Volume165
Issue number1
DOIs
Publication statusPublished - 2012 Apr 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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