On the hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)

Chi Shiang Hsu, Huey-Ing Chen, Chung Fu Chang, Tai You Chen, Chien Chang Huang, Po Cheng Chou, Wen-Chau Liu

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The interesting temperature-dependent hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET) are studied and demonstrated. Remarkable hydrogen sensing performance is found at a very low concentration of hydrogen gases (≤1 ppm H 2/air). In addition, a good transistor switching behavior with the high drain current on/off value of 93,680 is obtained for 1% ppm H 2/air gas at 523 K. The fast transient response as comparable with a Schottky-type hydrogen sensor is also observed. Based on these advantages, the studied device shows a promise for high-performance, high-temperature electronics, and micro electro-mechanical system (MEMS) applications.

Original languageEnglish
Pages (from-to)19-23
Number of pages5
JournalSensors and Actuators, B: Chemical
Volume165
Issue number1
DOIs
Publication statusPublished - 2012 Apr 1

Fingerprint

High electron mobility transistors
Hydrogen
field effect transistors
hydrogen
Gases
Drain current
air
transient response
Air
gases
Transient analysis
high current
low concentrations
Transistors
Electronic equipment
transistors
Temperature
aluminum gallium nitride
sensors
Sensors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Hsu, Chi Shiang ; Chen, Huey-Ing ; Chang, Chung Fu ; Chen, Tai You ; Huang, Chien Chang ; Chou, Po Cheng ; Liu, Wen-Chau. / On the hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET). In: Sensors and Actuators, B: Chemical. 2012 ; Vol. 165, No. 1. pp. 19-23.
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On the hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET). / Hsu, Chi Shiang; Chen, Huey-Ing; Chang, Chung Fu; Chen, Tai You; Huang, Chien Chang; Chou, Po Cheng; Liu, Wen-Chau.

In: Sensors and Actuators, B: Chemical, Vol. 165, No. 1, 01.04.2012, p. 19-23.

Research output: Contribution to journalArticle

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T1 - On the hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)

AU - Hsu, Chi Shiang

AU - Chen, Huey-Ing

AU - Chang, Chung Fu

AU - Chen, Tai You

AU - Huang, Chien Chang

AU - Chou, Po Cheng

AU - Liu, Wen-Chau

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AB - The interesting temperature-dependent hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET) are studied and demonstrated. Remarkable hydrogen sensing performance is found at a very low concentration of hydrogen gases (≤1 ppm H 2/air). In addition, a good transistor switching behavior with the high drain current on/off value of 93,680 is obtained for 1% ppm H 2/air gas at 523 K. The fast transient response as comparable with a Schottky-type hydrogen sensor is also observed. Based on these advantages, the studied device shows a promise for high-performance, high-temperature electronics, and micro electro-mechanical system (MEMS) applications.

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