On the hydrogen sensing properties of a Pd/GaAs transistor-type gas sensor in a nitrogen ambiance

Ching Wen Hung, Kun Wei Lin, Rong Chau Liu, Yan Ying Tsai, Po Hsien Lai, Ssu I. Fu, Tzu Pin Chen, Huey-Ing Chen, Wen-Chau Liu

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

A hydrogen sensor based on the Pd/GaAs pseudomorphic high electron mobility transistor (PHEMT) is fabricated and investigated under various hydrogen concentrations in air and N2 environments. Experimentally, in nitrogen (air) ambiances, the studied sensor exhibits a hydrogen detection limit of 4.3 ppm H2/N2 (98 ppm H2/air) at 130 °C, a high sensitivity of 1295 μA/mm-ppm H2/N2 (275.8 μA/mm-ppm H2/air) in 14 ppm H2/N2 (H2/air) at 30 °C, a fast transient response time of 2 (3) s in 9970 ppm H2/N2 (H2/air) at 130 °C, and a large initial rate of 774.4 (589.8) μA/s in 9970 ppm H2/N2 (H2/air) at 90 °C. However, the studied sensor shows a longer recovery time in nitrogen than in air due to the lack of additional desorption process. From the experimental results, it is speculated that the oxygen in air occupies the adsorption sites and reduces the adsorbed hydrogen atoms at the Pd/GaAs interface. This interprets that the studied sensor shows a larger hydrogen-induced current variation in nitrogen than in air under the same hydrogen concentration. In addition, there is no overshoot phenomenon in transient response observed in the nitrogen atmosphere due to the absence of oxygen.

Original languageEnglish
Pages (from-to)22-29
Number of pages8
JournalSensors and Actuators, B: Chemical
Volume125
Issue number1
DOIs
Publication statusPublished - 2007 Jul 16

Fingerprint

ambience
Chemical sensors
Hydrogen
Transistors
transistors
Nitrogen
nitrogen
sensors
air
hydrogen
Air
gases
Sensors
transient response
Transient analysis
gallium arsenide
Oxygen
Induced currents
oxygen
High electron mobility transistors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Hung, Ching Wen ; Lin, Kun Wei ; Liu, Rong Chau ; Tsai, Yan Ying ; Lai, Po Hsien ; Fu, Ssu I. ; Chen, Tzu Pin ; Chen, Huey-Ing ; Liu, Wen-Chau. / On the hydrogen sensing properties of a Pd/GaAs transistor-type gas sensor in a nitrogen ambiance. In: Sensors and Actuators, B: Chemical. 2007 ; Vol. 125, No. 1. pp. 22-29.
@article{0208c51276284cf79e27f9784571d519,
title = "On the hydrogen sensing properties of a Pd/GaAs transistor-type gas sensor in a nitrogen ambiance",
abstract = "A hydrogen sensor based on the Pd/GaAs pseudomorphic high electron mobility transistor (PHEMT) is fabricated and investigated under various hydrogen concentrations in air and N2 environments. Experimentally, in nitrogen (air) ambiances, the studied sensor exhibits a hydrogen detection limit of 4.3 ppm H2/N2 (98 ppm H2/air) at 130 °C, a high sensitivity of 1295 μA/mm-ppm H2/N2 (275.8 μA/mm-ppm H2/air) in 14 ppm H2/N2 (H2/air) at 30 °C, a fast transient response time of 2 (3) s in 9970 ppm H2/N2 (H2/air) at 130 °C, and a large initial rate of 774.4 (589.8) μA/s in 9970 ppm H2/N2 (H2/air) at 90 °C. However, the studied sensor shows a longer recovery time in nitrogen than in air due to the lack of additional desorption process. From the experimental results, it is speculated that the oxygen in air occupies the adsorption sites and reduces the adsorbed hydrogen atoms at the Pd/GaAs interface. This interprets that the studied sensor shows a larger hydrogen-induced current variation in nitrogen than in air under the same hydrogen concentration. In addition, there is no overshoot phenomenon in transient response observed in the nitrogen atmosphere due to the absence of oxygen.",
author = "Hung, {Ching Wen} and Lin, {Kun Wei} and Liu, {Rong Chau} and Tsai, {Yan Ying} and Lai, {Po Hsien} and Fu, {Ssu I.} and Chen, {Tzu Pin} and Huey-Ing Chen and Wen-Chau Liu",
year = "2007",
month = "7",
day = "16",
doi = "10.1016/j.snb.2007.01.027",
language = "English",
volume = "125",
pages = "22--29",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",
number = "1",

}

On the hydrogen sensing properties of a Pd/GaAs transistor-type gas sensor in a nitrogen ambiance. / Hung, Ching Wen; Lin, Kun Wei; Liu, Rong Chau; Tsai, Yan Ying; Lai, Po Hsien; Fu, Ssu I.; Chen, Tzu Pin; Chen, Huey-Ing; Liu, Wen-Chau.

In: Sensors and Actuators, B: Chemical, Vol. 125, No. 1, 16.07.2007, p. 22-29.

Research output: Contribution to journalArticle

TY - JOUR

T1 - On the hydrogen sensing properties of a Pd/GaAs transistor-type gas sensor in a nitrogen ambiance

AU - Hung, Ching Wen

AU - Lin, Kun Wei

AU - Liu, Rong Chau

AU - Tsai, Yan Ying

AU - Lai, Po Hsien

AU - Fu, Ssu I.

AU - Chen, Tzu Pin

AU - Chen, Huey-Ing

AU - Liu, Wen-Chau

PY - 2007/7/16

Y1 - 2007/7/16

N2 - A hydrogen sensor based on the Pd/GaAs pseudomorphic high electron mobility transistor (PHEMT) is fabricated and investigated under various hydrogen concentrations in air and N2 environments. Experimentally, in nitrogen (air) ambiances, the studied sensor exhibits a hydrogen detection limit of 4.3 ppm H2/N2 (98 ppm H2/air) at 130 °C, a high sensitivity of 1295 μA/mm-ppm H2/N2 (275.8 μA/mm-ppm H2/air) in 14 ppm H2/N2 (H2/air) at 30 °C, a fast transient response time of 2 (3) s in 9970 ppm H2/N2 (H2/air) at 130 °C, and a large initial rate of 774.4 (589.8) μA/s in 9970 ppm H2/N2 (H2/air) at 90 °C. However, the studied sensor shows a longer recovery time in nitrogen than in air due to the lack of additional desorption process. From the experimental results, it is speculated that the oxygen in air occupies the adsorption sites and reduces the adsorbed hydrogen atoms at the Pd/GaAs interface. This interprets that the studied sensor shows a larger hydrogen-induced current variation in nitrogen than in air under the same hydrogen concentration. In addition, there is no overshoot phenomenon in transient response observed in the nitrogen atmosphere due to the absence of oxygen.

AB - A hydrogen sensor based on the Pd/GaAs pseudomorphic high electron mobility transistor (PHEMT) is fabricated and investigated under various hydrogen concentrations in air and N2 environments. Experimentally, in nitrogen (air) ambiances, the studied sensor exhibits a hydrogen detection limit of 4.3 ppm H2/N2 (98 ppm H2/air) at 130 °C, a high sensitivity of 1295 μA/mm-ppm H2/N2 (275.8 μA/mm-ppm H2/air) in 14 ppm H2/N2 (H2/air) at 30 °C, a fast transient response time of 2 (3) s in 9970 ppm H2/N2 (H2/air) at 130 °C, and a large initial rate of 774.4 (589.8) μA/s in 9970 ppm H2/N2 (H2/air) at 90 °C. However, the studied sensor shows a longer recovery time in nitrogen than in air due to the lack of additional desorption process. From the experimental results, it is speculated that the oxygen in air occupies the adsorption sites and reduces the adsorbed hydrogen atoms at the Pd/GaAs interface. This interprets that the studied sensor shows a larger hydrogen-induced current variation in nitrogen than in air under the same hydrogen concentration. In addition, there is no overshoot phenomenon in transient response observed in the nitrogen atmosphere due to the absence of oxygen.

UR - http://www.scopus.com/inward/record.url?scp=34347340393&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34347340393&partnerID=8YFLogxK

U2 - 10.1016/j.snb.2007.01.027

DO - 10.1016/j.snb.2007.01.027

M3 - Article

AN - SCOPUS:34347340393

VL - 125

SP - 22

EP - 29

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

IS - 1

ER -