TY - JOUR
T1 - On the improved performance of thermoelectric generators with low dimensional polysilicon-germanium thermocouples by BiCMOS process
AU - Yang, S. M.
AU - Wang, J. Y.
AU - Chen, M. D.
N1 - Funding Information:
The authors are grateful to the Ministry of Science and Technology , Taiwan, ROC with grant 108-2221-E006-069 , and to Taiwan Semiconductor Research Institute for BiCMOS process and dry etching support.
Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2020/5/1
Y1 - 2020/5/1
N2 - Standard complementary-metal-oxide semi-conductor (CMOS) process for the advantages in batch production, low cost, and mostly importantly, scalability has been applied to thermoelectric generator (TEG) designs, where silicon materials are preferable for monolithic circuit integration. In this work, the BiCMOS process is found to be a perfect platform for TEG designs to achieve higher performance by the polysilicon-germanium thin film layer. Simulations of the TEG designs by 0.35 μm SiGe 3P3M and 0.18 μm SiGe 3P6M BiCMOS processes (TSMC) show that the power factors are respectively 0.242 and 0.125 μW/cm2 K2, and the voltage factors are 10.04 and 25.91 V/cm2 K. Both are shown to be superior to all micro TEGs by semiconductor process in the open literature. Experimental verifications confirm the simulation results and validate the effectiveness of TEG designs by the polysilicon-germanium thin film layer in BiCMOS process.
AB - Standard complementary-metal-oxide semi-conductor (CMOS) process for the advantages in batch production, low cost, and mostly importantly, scalability has been applied to thermoelectric generator (TEG) designs, where silicon materials are preferable for monolithic circuit integration. In this work, the BiCMOS process is found to be a perfect platform for TEG designs to achieve higher performance by the polysilicon-germanium thin film layer. Simulations of the TEG designs by 0.35 μm SiGe 3P3M and 0.18 μm SiGe 3P6M BiCMOS processes (TSMC) show that the power factors are respectively 0.242 and 0.125 μW/cm2 K2, and the voltage factors are 10.04 and 25.91 V/cm2 K. Both are shown to be superior to all micro TEGs by semiconductor process in the open literature. Experimental verifications confirm the simulation results and validate the effectiveness of TEG designs by the polysilicon-germanium thin film layer in BiCMOS process.
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U2 - 10.1016/j.sna.2020.111924
DO - 10.1016/j.sna.2020.111924
M3 - Article
AN - SCOPUS:85082862385
SN - 0924-4247
VL - 306
JO - Sensors and Actuators, A: Physical
JF - Sensors and Actuators, A: Physical
M1 - 111924
ER -