On the Improvement of Gate Voltage Swings in δ-Doped GaAs/InxGa1-xAs/GaAs Pseudomorphic Heterostructures

Wei Chou Hsu, Hir Ming Shieh, Ming Jer Kao, Rong Tay Hsu, Yu Huei Wu

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Significant improvements on gate voltage swings in 5-doped GaAs/InxGa1-xAs/GaAs pseudomorphic heterostructures prepared by low-pressure metalorganic chemical vapor deposition have been demonstrated and discussed. Structure utilizing a compositionally graded InxGa1-xAs channel revealed a very flat transconductance region of 2 V. While the gate voltage swings of single and double 5-doped GaAs/In0.25Ga0.75As/GaAs structures were 2.5 and 2.8 V, respectively. All structures in this work also exhibited high extrinsic transconductances as well as high saturation current densities.

Original languageEnglish
Pages (from-to)1630-1635
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume40
Issue number9
DOIs
Publication statusPublished - 1993 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'On the Improvement of Gate Voltage Swings in δ-Doped GaAs/InxGa1-xAs/GaAs Pseudomorphic Heterostructures'. Together they form a unique fingerprint.

  • Cite this