Significant improvements on gate voltage swings in 5-doped GaAs/InxGa1-xAs/GaAs pseudomorphic heterostructures prepared by low-pressure metalorganic chemical vapor deposition have been demonstrated and discussed. Structure utilizing a compositionally graded InxGa1-xAs channel revealed a very flat transconductance region of 2 V. While the gate voltage swings of single and double 5-doped GaAs/In0.25Ga0.75As/GaAs structures were 2.5 and 2.8 V, respectively. All structures in this work also exhibited high extrinsic transconductances as well as high saturation current densities.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering