A new field-effect transistor using a high-barrier n +-GaAs/p +-InGaP/n-GaAs camel-like gate and GaAs/InGaAs heterostructure-channel has been fabricated successfully and demonstrated. Experimentally, an ultra high gate-drain breakdown voltage of 52 V, a high drain-source operation voltage over 20 V with low leakage currents, and a high drain-source off-state breakdown voltage of 39.7 V are obtained for a 1 × 100 μm 2 device. These high breakdown behaviors are attributed to the use of high barrier camel-like gate and heterostructure channel to reduce the undesired leakage current. Furthermore, the studied device also shows high breakdown behaviors at high temperature environment and good microwave characteristics. Therefore, based on these good characteristics, the studied device is suitable for high-breakdown, low-leakage, and high-temperature applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering