On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistors for high-temperature operations

Kun Wei Lin, Kuo Hui Yu, Wen Lung Chang, Chih Kai Wang, Wen Huei Chiou, Wen Chau Liu

Research output: Contribution to journalArticle

Abstract

The high-temperature characteristics of a novel InGaP/InxGa1-xAs pseudomorphic transistor with an inverted delta-doped channel are reported. Due to the presented wide-gap InGaP Schottky layer and the V-shaped InxGa1-xAs channel structure, the degradation of device performance with increasing the temperature is not so significant. Experimentally, for a 1 × 100 μm2 device, the gate-drain voltages at a gate leakage current of 260 μA/mm and the maximum transconductances gm,max are 30 (22.2) V and 201 (169) mS/mm at the temperature of 300 (450) K, respectively. Meanwhile, broad and flat drain current operation regimes for gm, fT and fmax are obtained.

Original languageEnglish
Pages (from-to)1897-1902
Number of pages6
JournalMicroelectronics Reliability
Volume41
Issue number11
DOIs
Publication statusPublished - 2001 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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