On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistors for high-temperature operations

Kun Wei Lin, Kuo Hui Yu, Wen Lung Chang, Chih Kai Wang, Wen Huei Chiou, Wen-Chau Liu

Research output: Contribution to journalArticle

Abstract

The high-temperature characteristics of a novel InGaP/InxGa1-xAs pseudomorphic transistor with an inverted delta-doped channel are reported. Due to the presented wide-gap InGaP Schottky layer and the V-shaped InxGa1-xAs channel structure, the degradation of device performance with increasing the temperature is not so significant. Experimentally, for a 1 × 100 μm2 device, the gate-drain voltages at a gate leakage current of 260 μA/mm and the maximum transconductances gm,max are 30 (22.2) V and 201 (169) mS/mm at the temperature of 300 (450) K, respectively. Meanwhile, broad and flat drain current operation regimes for gm, fT and fmax are obtained.

Original languageEnglish
Pages (from-to)1897-1902
Number of pages6
JournalMicroelectronics Reliability
Volume41
Issue number11
DOIs
Publication statusPublished - 2001 Nov 1

Fingerprint

High temperature operations
High electron mobility transistors
high electron mobility transistors
transconductance
leakage
transistors
Drain current
Transconductance
degradation
Leakage currents
Temperature
temperature
Transistors
electric potential
Degradation
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Lin, Kun Wei ; Yu, Kuo Hui ; Chang, Wen Lung ; Wang, Chih Kai ; Chiou, Wen Huei ; Liu, Wen-Chau. / On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistors for high-temperature operations. In: Microelectronics Reliability. 2001 ; Vol. 41, No. 11. pp. 1897-1902.
@article{c1065d77bc004dffb15e1fe452c75473,
title = "On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistors for high-temperature operations",
abstract = "The high-temperature characteristics of a novel InGaP/InxGa1-xAs pseudomorphic transistor with an inverted delta-doped channel are reported. Due to the presented wide-gap InGaP Schottky layer and the V-shaped InxGa1-xAs channel structure, the degradation of device performance with increasing the temperature is not so significant. Experimentally, for a 1 × 100 μm2 device, the gate-drain voltages at a gate leakage current of 260 μA/mm and the maximum transconductances gm,max are 30 (22.2) V and 201 (169) mS/mm at the temperature of 300 (450) K, respectively. Meanwhile, broad and flat drain current operation regimes for gm, fT and fmax are obtained.",
author = "Lin, {Kun Wei} and Yu, {Kuo Hui} and Chang, {Wen Lung} and Wang, {Chih Kai} and Chiou, {Wen Huei} and Wen-Chau Liu",
year = "2001",
month = "11",
day = "1",
doi = "10.1016/S0026-2714(01)00093-2",
language = "English",
volume = "41",
pages = "1897--1902",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Elsevier Limited",
number = "11",

}

On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistors for high-temperature operations. / Lin, Kun Wei; Yu, Kuo Hui; Chang, Wen Lung; Wang, Chih Kai; Chiou, Wen Huei; Liu, Wen-Chau.

In: Microelectronics Reliability, Vol. 41, No. 11, 01.11.2001, p. 1897-1902.

Research output: Contribution to journalArticle

TY - JOUR

T1 - On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistors for high-temperature operations

AU - Lin, Kun Wei

AU - Yu, Kuo Hui

AU - Chang, Wen Lung

AU - Wang, Chih Kai

AU - Chiou, Wen Huei

AU - Liu, Wen-Chau

PY - 2001/11/1

Y1 - 2001/11/1

N2 - The high-temperature characteristics of a novel InGaP/InxGa1-xAs pseudomorphic transistor with an inverted delta-doped channel are reported. Due to the presented wide-gap InGaP Schottky layer and the V-shaped InxGa1-xAs channel structure, the degradation of device performance with increasing the temperature is not so significant. Experimentally, for a 1 × 100 μm2 device, the gate-drain voltages at a gate leakage current of 260 μA/mm and the maximum transconductances gm,max are 30 (22.2) V and 201 (169) mS/mm at the temperature of 300 (450) K, respectively. Meanwhile, broad and flat drain current operation regimes for gm, fT and fmax are obtained.

AB - The high-temperature characteristics of a novel InGaP/InxGa1-xAs pseudomorphic transistor with an inverted delta-doped channel are reported. Due to the presented wide-gap InGaP Schottky layer and the V-shaped InxGa1-xAs channel structure, the degradation of device performance with increasing the temperature is not so significant. Experimentally, for a 1 × 100 μm2 device, the gate-drain voltages at a gate leakage current of 260 μA/mm and the maximum transconductances gm,max are 30 (22.2) V and 201 (169) mS/mm at the temperature of 300 (450) K, respectively. Meanwhile, broad and flat drain current operation regimes for gm, fT and fmax are obtained.

UR - http://www.scopus.com/inward/record.url?scp=0035501276&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035501276&partnerID=8YFLogxK

U2 - 10.1016/S0026-2714(01)00093-2

DO - 10.1016/S0026-2714(01)00093-2

M3 - Article

VL - 41

SP - 1897

EP - 1902

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 11

ER -