The high-temperature characteristics of a novel InGaP/InxGa1-xAs pseudomorphic transistor with an inverted delta-doped channel are reported. Due to the presented wide-gap InGaP Schottky layer and the V-shaped InxGa1-xAs channel structure, the degradation of device performance with increasing the temperature is not so significant. Experimentally, for a 1 × 100 μm2 device, the gate-drain voltages at a gate leakage current of 260 μA/mm and the maximum transconductances gm,max are 30 (22.2) V and 201 (169) mS/mm at the temperature of 300 (450) K, respectively. Meanwhile, broad and flat drain current operation regimes for gm, fT and fmax are obtained.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering