On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistor s with high-temperature reliabilities

Wen-Chau Liu, W. L. Chang, W. S. Lour, K. H. Yu, K. W. Lin, K. P. Lin, C. H. Yen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We reported the high-temperature reliability characteristics of a novel InGaP/InxGa1-xAs pseudomorphic transistor with an inverted delta-doped channel in this work. Due to the presented wide-gap InGaP Schottky layer and the "V-shaped" InxGa1-xAs channel structure, the degradation of device performance with increasing the temperature is not so significant. Experimentally, for a 1×100 μm2 device, the gate-drain voltages at a gate leakage current of 260 μA/mm and the maximum transconductances gm,maxare 30 (22.2) V and 201 (169) mS/mm at the temperature of 300 K (450 K), respectively. Meanwhile, the broad and flat drain current operation regimes for high gm, fT, and fmaxare obtained.

Original languageEnglish
Title of host publicationESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
EditorsH. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
PublisherIEEE Computer Society
Pages428-431
Number of pages4
ISBN (Electronic)2863322486
ISBN (Print)9782863322482
DOIs
Publication statusPublished - 2000 Jan 1
Event30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland
Duration: 2000 Sep 112000 Sep 13

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other30th European Solid-State Device Research Conference, ESSDERC 2000
CountryIreland
CityCork
Period00-09-1100-09-13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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