On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistor s with high-temperature reliabilities

W. C. Liu; W. L. Chang; W. S. Lour; K. H. Yu; K. W. Lin; K. P. Lin; C. H. Yen

doi:10.1109/ESSDERC.2000.194806

On the InGaP/In_xGa_1-xAs pseudomorphic high electron-mobility transistor s with high-temperature reliabilities

W. C. Liu, W. L. Chang, W. S. Lour, K. H. Yu, K. W. Lin, K. P. Lin, C. H. Yen

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We reported the high-temperature reliability characteristics of a novel InGaP/In_xGa_1-xAs pseudomorphic transistor with an inverted delta-doped channel in this work. Due to the presented wide-gap InGaP Schottky layer and the "V-shaped" InxGa1-_xAs channel structure, the degradation of device performance with increasing the temperature is not so significant. Experimentally, for a 1×100 μm2 device, the gate-drain voltages at a gate leakage current of 260 μA/mm and the maximum transconductances g_m,maxare 30 (22.2) V and 201 (169) mS/mm at the temperature of 300 K (450 K), respectively. Meanwhile, the broad and flat drain current operation regimes for high _gm, fT, and f_maxare obtained.

Original language	English
Title of host publication	ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
Editors	H. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
Publisher	IEEE Computer Society
Pages	428-431
Number of pages	4
ISBN (Electronic)	2863322486
ISBN (Print)	9782863322482
DOIs	https://doi.org/10.1109/ESSDERC.2000.194806
Publication status	Published - 2000
Event	30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland Duration: 2000 Sept 11 → 2000 Sept 13

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Other

Other	30th European Solid-State Device Research Conference, ESSDERC 2000
Country/Territory	Ireland
City	Cork
Period	00-09-11 → 00-09-13

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Access to Document

10.1109/ESSDERC.2000.194806

Cite this

Liu, W. C., Chang, W. L., Lour, W. S., Yu, K. H., Lin, K. W., Lin, K. P., & Yen, C. H. (2000). On the InGaP/In_xGa_1-xAs pseudomorphic high electron-mobility transistor s with high-temperature reliabilities. In H. Grunbacher, G. M. Crean, W. A. Lane, & F. A. McCabe (Eds.), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference (pp. 428-431). Article 1503736 (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2000.194806

Liu, W. C. ; Chang, W. L. ; Lour, W. S. et al. / On the InGaP/In_xGa_1-xAs pseudomorphic high electron-mobility transistor s with high-temperature reliabilities. ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. editor / H. Grunbacher ; Gabriel M. Crean ; W. A. Lane ; Frank A. McCabe. IEEE Computer Society, 2000. pp. 428-431 (European Solid-State Device Research Conference).

@inproceedings{426f25f1dbb74ee2a3d5e73eed2579cb,

title = "On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistor s with high-temperature reliabilities",

abstract = "We reported the high-temperature reliability characteristics of a novel InGaP/InxGa1-xAs pseudomorphic transistor with an inverted delta-doped channel in this work. Due to the presented wide-gap InGaP Schottky layer and the {"}V-shaped{"} InxGa1-xAs channel structure, the degradation of device performance with increasing the temperature is not so significant. Experimentally, for a 1×100 μm2 device, the gate-drain voltages at a gate leakage current of 260 μA/mm and the maximum transconductances gm,maxare 30 (22.2) V and 201 (169) mS/mm at the temperature of 300 K (450 K), respectively. Meanwhile, the broad and flat drain current operation regimes for high gm, fT, and fmaxare obtained.",

author = "Liu, {W. C.} and Chang, {W. L.} and Lour, {W. S.} and Yu, {K. H.} and Lin, {K. W.} and Lin, {K. P.} and Yen, {C. H.}",

note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 30th European Solid-State Device Research Conference, ESSDERC 2000 ; Conference date: 11-09-2000 Through 13-09-2000",

year = "2000",

doi = "10.1109/ESSDERC.2000.194806",

language = "English",

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Liu, WC, Chang, WL, Lour, WS, Yu, KH, Lin, KW, Lin, KP & Yen, CH 2000, On the InGaP/In_xGa_1-xAs pseudomorphic high electron-mobility transistor s with high-temperature reliabilities. in H Grunbacher, GM Crean, WA Lane & FA McCabe (eds), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference., 1503736, European Solid-State Device Research Conference, IEEE Computer Society, pp. 428-431, 30th European Solid-State Device Research Conference, ESSDERC 2000, Cork, Ireland, 00-09-11. https://doi.org/10.1109/ESSDERC.2000.194806

On the InGaP/In_xGa_1-xAs pseudomorphic high electron-mobility transistor s with high-temperature reliabilities. / Liu, W. C.; Chang, W. L.; Lour, W. S. et al.
ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. ed. / H. Grunbacher; Gabriel M. Crean; W. A. Lane; Frank A. McCabe. IEEE Computer Society, 2000. p. 428-431 1503736 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistor s with high-temperature reliabilities

AU - Liu, W. C.

AU - Chang, W. L.

AU - Lour, W. S.

AU - Yu, K. H.

AU - Lin, K. W.

AU - Lin, K. P.

AU - Yen, C. H.

PY - 2000

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N2 - We reported the high-temperature reliability characteristics of a novel InGaP/InxGa1-xAs pseudomorphic transistor with an inverted delta-doped channel in this work. Due to the presented wide-gap InGaP Schottky layer and the "V-shaped" InxGa1-xAs channel structure, the degradation of device performance with increasing the temperature is not so significant. Experimentally, for a 1×100 μm2 device, the gate-drain voltages at a gate leakage current of 260 μA/mm and the maximum transconductances gm,maxare 30 (22.2) V and 201 (169) mS/mm at the temperature of 300 K (450 K), respectively. Meanwhile, the broad and flat drain current operation regimes for high gm, fT, and fmaxare obtained.

AB - We reported the high-temperature reliability characteristics of a novel InGaP/InxGa1-xAs pseudomorphic transistor with an inverted delta-doped channel in this work. Due to the presented wide-gap InGaP Schottky layer and the "V-shaped" InxGa1-xAs channel structure, the degradation of device performance with increasing the temperature is not so significant. Experimentally, for a 1×100 μm2 device, the gate-drain voltages at a gate leakage current of 260 μA/mm and the maximum transconductances gm,maxare 30 (22.2) V and 201 (169) mS/mm at the temperature of 300 K (450 K), respectively. Meanwhile, the broad and flat drain current operation regimes for high gm, fT, and fmaxare obtained.

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BT - ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference

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PB - IEEE Computer Society

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Y2 - 11 September 2000 through 13 September 2000

ER -

Liu WC, Chang WL, Lour WS, Yu KH, Lin KW, Lin KP et al. On the InGaP/In_xGa_1-xAs pseudomorphic high electron-mobility transistor s with high-temperature reliabilities. In Grunbacher H, Crean GM, Lane WA, McCabe FA, editors, ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. IEEE Computer Society. 2000. p. 428-431. 1503736. (European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2000.194806