On the InP/InGaAs double heterojunction bipolar transistor (DHBT) with emitter tunneling barrier and composite collector structure

J. Y. Chen, K. W. Lin, C. Y. Chen, H. M. Chuang, C. T. Kao, W. C. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An InP/InGaAs double heterojunction bipolar transistor (DHBT) with an undoped emitter tunneling barrier and composite collector structure is fabricated and studied. Due to the mass filtering effect for holes, a thin in P tunneling barrier can be used to replace the wide-gap emitter. Experimentally, an appropriate tunneling barrier thickness of 150Å is employed to achieve good IV characteristics, In addition, in GaAsP compositionally step-graded layers are introduced between the p-InGaAs base and n-InP collector. By modulating the bandgap energy of InGaAsP, the large base-collector (B-C) potential spike can be divided into several small spikes with lower barrier height. The 4000Å InP collectors with InP/InGaAsP/InGaAs step-graded junction achieve high breakdown voltages of 14.6V. A small offset voltage of 80mV and a small saturation voltage of 1.8V at the collector current level of 5mA are obtained. Prior to the current gain fall-off caused by the self-heating effect, the step-graded DMBT has the current gain as high as 118 at Ic = 30mA and Vce = 3V.

Original languageEnglish
Title of host publication2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
EditorsMichael Gal
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages357-360
Number of pages4
ISBN (Electronic)0780375718
DOIs
Publication statusPublished - 2002
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia
Duration: 2002 Dec 112002 Dec 13

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume2002-January

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Country/TerritoryAustralia
CitySydney
Period02-12-1102-12-13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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