On the low-medium-high step-modulation-doped-channel (LMH-SMDC) heterostructure field-effect transistor

Yung Hsin Shie; Wen Lung Chang; Hsi Jen Pan; Shiou Ying Cheng; Wen Shiung Lour; Wen Chau Liu

doi:10.1016/S0254-0584(98)00230-2

On the low-medium-high step-modulation-doped-channel (LMH-SMDC) heterostructure field-effect transistor

Yung Hsin Shie, Wen Lung Chang, Hsi Jen Pan, Shiou Ying Cheng, Wen Shiung Lour, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

Abstract

A new low-medium-high step-modulation-doped-channel (LMH-SMDC) GaInP/GaAs high barrier gate heterosturcture field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped δ(p⁺)-GaInP layer is introduced to increase high gate turn-on and breakdown voltage and reduce the gate leakage current. A LMH-SMDC structure is used to improve the output current drivability and average transconductance. In addition, a LMH-SMDC metal-semiconductor field-effect transistor (MESFET) has also been fabricated for comparison. The studied devices show good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (f_T) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.

Original language	English
Pages (from-to)	268-272
Number of pages	5
Journal	Materials Chemistry and Physics
Volume	57
Issue number	3
DOIs	https://doi.org/10.1016/S0254-0584(98)00230-2
Publication status	Published - 1999 Jan 25

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics

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10.1016/S0254-0584(98)00230-2

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@article{b8d3cb5f3a00450bbf61b9ef24d66b37,

title = "On the low-medium-high step-modulation-doped-channel (LMH-SMDC) heterostructure field-effect transistor",

abstract = "A new low-medium-high step-modulation-doped-channel (LMH-SMDC) GaInP/GaAs high barrier gate heterosturcture field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped δ(p+)-GaInP layer is introduced to increase high gate turn-on and breakdown voltage and reduce the gate leakage current. A LMH-SMDC structure is used to improve the output current drivability and average transconductance. In addition, a LMH-SMDC metal-semiconductor field-effect transistor (MESFET) has also been fabricated for comparison. The studied devices show good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (fT) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.",

author = "Shie, {Yung Hsin} and Chang, {Wen Lung} and Pan, {Hsi Jen} and Cheng, {Shiou Ying} and Lour, {Wen Shiung} and Liu, {Wen Chau}",

note = "Funding Information: This study was supported by the National Science Council of the Republic of China under contract No. NSC.87-2215-E-006-023. ",

year = "1999",

month = jan,

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doi = "10.1016/S0254-0584(98)00230-2",

language = "English",

volume = "57",

pages = "268--272",

journal = "Materials Chemistry and Physics",

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T1 - On the low-medium-high step-modulation-doped-channel (LMH-SMDC) heterostructure field-effect transistor

AU - Shie, Yung Hsin

AU - Chang, Wen Lung

AU - Pan, Hsi Jen

AU - Cheng, Shiou Ying

AU - Lour, Wen Shiung

AU - Liu, Wen Chau

N1 - Funding Information: This study was supported by the National Science Council of the Republic of China under contract No. NSC.87-2215-E-006-023.

PY - 1999/1/25

Y1 - 1999/1/25

N2 - A new low-medium-high step-modulation-doped-channel (LMH-SMDC) GaInP/GaAs high barrier gate heterosturcture field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped δ(p+)-GaInP layer is introduced to increase high gate turn-on and breakdown voltage and reduce the gate leakage current. A LMH-SMDC structure is used to improve the output current drivability and average transconductance. In addition, a LMH-SMDC metal-semiconductor field-effect transistor (MESFET) has also been fabricated for comparison. The studied devices show good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (fT) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.

AB - A new low-medium-high step-modulation-doped-channel (LMH-SMDC) GaInP/GaAs high barrier gate heterosturcture field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped δ(p+)-GaInP layer is introduced to increase high gate turn-on and breakdown voltage and reduce the gate leakage current. A LMH-SMDC structure is used to improve the output current drivability and average transconductance. In addition, a LMH-SMDC metal-semiconductor field-effect transistor (MESFET) has also been fabricated for comparison. The studied devices show good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (fT) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.

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U2 - 10.1016/S0254-0584(98)00230-2

DO - 10.1016/S0254-0584(98)00230-2

M3 - Article

AN - SCOPUS:0032663164

SN - 0254-0584

VL - 57

SP - 268

EP - 272

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 3

ER -

On the low-medium-high step-modulation-doped-channel (LMH-SMDC) heterostructure field-effect transistor

Abstract

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