On the multiple negative-differential-resistance (MNDR) InGap/GaAs resonant tunneling bipolar transistors

W. C. Liu; H. J. Pan; W. C. Wang; S. C. Feng; K. W. Lin; K. H. Yu; L. W. Laih

doi:10.1109/16.925225

On the multiple negative-differential-resistance (MNDR) InGap/GaAs resonant tunneling bipolar transistors

W. C. Liu, H. J. Pan, W. C. Wang, S. C. Feng, K. W. Lin, K. H. Yu, L. W. Laih

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Two InGaP/GaAs resonant tunneling bipolar transistors (RTBTs) with different superlattice (SL) structures in the emitters are fabricated and studied. The uniform and modulated widths of barriers are respectively utilized in the specific SL structures. Based on the calculations, the ground state and first excited state minibands are estimated from the transmission probability. The electron transport of RT through SL structures is significantly determined by the electric field behaviors across the barriers. Experimentally, the excellent transistor characteristics including the small saturation voltage, small offset voltage, high breakdown voltages are obtained due to the insertion of δ-doping sheet at the base-collector (B-C) heterointerface. Furthermore, at higher current regimes, the double-and quaternary-negative difference resistance (NDR) phenomena are observed in agreement with the theoretical prediction at 300 K.

Original language	English
Pages (from-to)	1054-1059
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	6
DOIs	https://doi.org/10.1109/16.925225
Publication status	Published - 2001 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.925225

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@article{e2659097f4ce4d629a431a6dbf6210d6,

title = "On the multiple negative-differential-resistance (MNDR) InGap/GaAs resonant tunneling bipolar transistors",

abstract = "Two InGaP/GaAs resonant tunneling bipolar transistors (RTBTs) with different superlattice (SL) structures in the emitters are fabricated and studied. The uniform and modulated widths of barriers are respectively utilized in the specific SL structures. Based on the calculations, the ground state and first excited state minibands are estimated from the transmission probability. The electron transport of RT through SL structures is significantly determined by the electric field behaviors across the barriers. Experimentally, the excellent transistor characteristics including the small saturation voltage, small offset voltage, high breakdown voltages are obtained due to the insertion of δ-doping sheet at the base-collector (B-C) heterointerface. Furthermore, at higher current regimes, the double-and quaternary-negative difference resistance (NDR) phenomena are observed in agreement with the theoretical prediction at 300 K.",

author = "Liu, {W. C.} and Pan, {H. J.} and Wang, {W. C.} and Feng, {S. C.} and Lin, {K. W.} and Yu, {K. H.} and Laih, {L. W.}",

note = "Funding Information: Manuscript received July 12, 2000; revised December 13, 2000. This work was supported in part by the National Science Council of the R.O.C. under Contract NSC 89-2215-E-006-012. The review of this paper was arranged by Editor C.-Y. Lu.",

year = "2001",

month = jun,

doi = "10.1109/16.925225",

language = "English",

volume = "48",

pages = "1054--1059",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - On the multiple negative-differential-resistance (MNDR) InGap/GaAs resonant tunneling bipolar transistors

AU - Liu, W. C.

AU - Pan, H. J.

AU - Wang, W. C.

AU - Feng, S. C.

AU - Lin, K. W.

AU - Yu, K. H.

AU - Laih, L. W.

N1 - Funding Information: Manuscript received July 12, 2000; revised December 13, 2000. This work was supported in part by the National Science Council of the R.O.C. under Contract NSC 89-2215-E-006-012. The review of this paper was arranged by Editor C.-Y. Lu.

PY - 2001/6

Y1 - 2001/6

N2 - Two InGaP/GaAs resonant tunneling bipolar transistors (RTBTs) with different superlattice (SL) structures in the emitters are fabricated and studied. The uniform and modulated widths of barriers are respectively utilized in the specific SL structures. Based on the calculations, the ground state and first excited state minibands are estimated from the transmission probability. The electron transport of RT through SL structures is significantly determined by the electric field behaviors across the barriers. Experimentally, the excellent transistor characteristics including the small saturation voltage, small offset voltage, high breakdown voltages are obtained due to the insertion of δ-doping sheet at the base-collector (B-C) heterointerface. Furthermore, at higher current regimes, the double-and quaternary-negative difference resistance (NDR) phenomena are observed in agreement with the theoretical prediction at 300 K.

AB - Two InGaP/GaAs resonant tunneling bipolar transistors (RTBTs) with different superlattice (SL) structures in the emitters are fabricated and studied. The uniform and modulated widths of barriers are respectively utilized in the specific SL structures. Based on the calculations, the ground state and first excited state minibands are estimated from the transmission probability. The electron transport of RT through SL structures is significantly determined by the electric field behaviors across the barriers. Experimentally, the excellent transistor characteristics including the small saturation voltage, small offset voltage, high breakdown voltages are obtained due to the insertion of δ-doping sheet at the base-collector (B-C) heterointerface. Furthermore, at higher current regimes, the double-and quaternary-negative difference resistance (NDR) phenomena are observed in agreement with the theoretical prediction at 300 K.

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JF - IEEE Transactions on Electron Devices

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On the multiple negative-differential-resistance (MNDR) InGap/GaAs resonant tunneling bipolar transistors

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