Abstract
An interesting n + -InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) is fabricated and studied, In the n + -InGaAs/n-GaAs CDC structure, the narrow InGaAs layer is used to introduce the channel quantization effect. Thus, the effective energy-gap of InGaAs channel can be increased. In addition, the n-GaAs channel can improve the operation capability under higher electric field. Therefore, the impact ionization effect can be avoided. Experimentally, the studied device shows good DC and microwave performances with flat and wide operation regime.
| Original language | English |
|---|---|
| Title of host publication | 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings |
| Editors | Michael Gal |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 361-364 |
| Number of pages | 4 |
| ISBN (Electronic) | 0780375718 |
| DOIs | |
| Publication status | Published - 2002 Jan 1 |
| Event | Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia Duration: 2002 Dec 11 → 2002 Dec 13 |
Publication series
| Name | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD |
|---|---|
| Volume | 2002-January |
Other
| Other | Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 |
|---|---|
| Country | Australia |
| City | Sydney |
| Period | 02-12-11 → 02-12-13 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
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On the n + -InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) . / Chuang, H. M.; Lin, K. W.; Chen, C. Y.; Chen, J. Y.; Kao, C. I.; Liu, Wen-Chau.
2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. ed. / Michael Gal. Institute of Electrical and Electronics Engineers Inc., 2002. p. 361-364 1237265 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - On the n + -InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET)
AU - Chuang, H. M.
AU - Lin, K. W.
AU - Chen, C. Y.
AU - Chen, J. Y.
AU - Kao, C. I.
AU - Liu, Wen-Chau
PY - 2002/1/1
Y1 - 2002/1/1
N2 - An interesting n + -InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) is fabricated and studied, In the n + -InGaAs/n-GaAs CDC structure, the narrow InGaAs layer is used to introduce the channel quantization effect. Thus, the effective energy-gap of InGaAs channel can be increased. In addition, the n-GaAs channel can improve the operation capability under higher electric field. Therefore, the impact ionization effect can be avoided. Experimentally, the studied device shows good DC and microwave performances with flat and wide operation regime.
AB - An interesting n + -InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) is fabricated and studied, In the n + -InGaAs/n-GaAs CDC structure, the narrow InGaAs layer is used to introduce the channel quantization effect. Thus, the effective energy-gap of InGaAs channel can be increased. In addition, the n-GaAs channel can improve the operation capability under higher electric field. Therefore, the impact ionization effect can be avoided. Experimentally, the studied device shows good DC and microwave performances with flat and wide operation regime.
UR - http://www.scopus.com/inward/record.url?scp=84952662033&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84952662033&partnerID=8YFLogxK
U2 - 10.1109/COMMAD.2002.1237265
DO - 10.1109/COMMAD.2002.1237265
M3 - Conference contribution
T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
SP - 361
EP - 364
BT - 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
A2 - Gal, Michael
PB - Institute of Electrical and Electronics Engineers Inc.
ER -