On the n + -InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET)

H. M. Chuang, K. W. Lin, C. Y. Chen, J. Y. Chen, C. I. Kao, Wen-Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An interesting n + -InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) is fabricated and studied, In the n + -InGaAs/n-GaAs CDC structure, the narrow InGaAs layer is used to introduce the channel quantization effect. Thus, the effective energy-gap of InGaAs channel can be increased. In addition, the n-GaAs channel can improve the operation capability under higher electric field. Therefore, the impact ionization effect can be avoided. Experimentally, the studied device shows good DC and microwave performances with flat and wide operation regime.

Original languageEnglish
Title of host publication2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
EditorsMichael Gal
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages361-364
Number of pages4
ISBN (Electronic)0780375718
DOIs
Publication statusPublished - 2002 Jan 1
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia
Duration: 2002 Dec 112002 Dec 13

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume2002-January

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
CountryAustralia
CitySydney
Period02-12-1102-12-13

Fingerprint

Impact ionization
High electron mobility transistors
Energy gap
Microwaves
Electric fields
Composite materials
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Chuang, H. M., Lin, K. W., Chen, C. Y., Chen, J. Y., Kao, C. I., & Liu, W-C. (2002). On the n + -InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) In M. Gal (Ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings (pp. 361-364). [1237265] (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2002.1237265
Chuang, H. M. ; Lin, K. W. ; Chen, C. Y. ; Chen, J. Y. ; Kao, C. I. ; Liu, Wen-Chau. / On the n + -InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. editor / Michael Gal. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 361-364 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).
@inproceedings{7720084d0ee54625ac144447b5327362,
title = "On the n + -InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET)",
abstract = "An interesting n + -InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) is fabricated and studied, In the n + -InGaAs/n-GaAs CDC structure, the narrow InGaAs layer is used to introduce the channel quantization effect. Thus, the effective energy-gap of InGaAs channel can be increased. In addition, the n-GaAs channel can improve the operation capability under higher electric field. Therefore, the impact ionization effect can be avoided. Experimentally, the studied device shows good DC and microwave performances with flat and wide operation regime.",
author = "Chuang, {H. M.} and Lin, {K. W.} and Chen, {C. Y.} and Chen, {J. Y.} and Kao, {C. I.} and Wen-Chau Liu",
year = "2002",
month = "1",
day = "1",
doi = "10.1109/COMMAD.2002.1237265",
language = "English",
series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "361--364",
editor = "Michael Gal",
booktitle = "2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings",
address = "United States",

}

Chuang, HM, Lin, KW, Chen, CY, Chen, JY, Kao, CI & Liu, W-C 2002, On the n + -InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) in M Gal (ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings., 1237265, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, vol. 2002-January, Institute of Electrical and Electronics Engineers Inc., pp. 361-364, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002, Sydney, Australia, 02-12-11. https://doi.org/10.1109/COMMAD.2002.1237265

On the n + -InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) . / Chuang, H. M.; Lin, K. W.; Chen, C. Y.; Chen, J. Y.; Kao, C. I.; Liu, Wen-Chau.

2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. ed. / Michael Gal. Institute of Electrical and Electronics Engineers Inc., 2002. p. 361-364 1237265 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - On the n + -InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET)

AU - Chuang, H. M.

AU - Lin, K. W.

AU - Chen, C. Y.

AU - Chen, J. Y.

AU - Kao, C. I.

AU - Liu, Wen-Chau

PY - 2002/1/1

Y1 - 2002/1/1

N2 - An interesting n + -InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) is fabricated and studied, In the n + -InGaAs/n-GaAs CDC structure, the narrow InGaAs layer is used to introduce the channel quantization effect. Thus, the effective energy-gap of InGaAs channel can be increased. In addition, the n-GaAs channel can improve the operation capability under higher electric field. Therefore, the impact ionization effect can be avoided. Experimentally, the studied device shows good DC and microwave performances with flat and wide operation regime.

AB - An interesting n + -InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) is fabricated and studied, In the n + -InGaAs/n-GaAs CDC structure, the narrow InGaAs layer is used to introduce the channel quantization effect. Thus, the effective energy-gap of InGaAs channel can be increased. In addition, the n-GaAs channel can improve the operation capability under higher electric field. Therefore, the impact ionization effect can be avoided. Experimentally, the studied device shows good DC and microwave performances with flat and wide operation regime.

UR - http://www.scopus.com/inward/record.url?scp=84952662033&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84952662033&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2002.1237265

DO - 10.1109/COMMAD.2002.1237265

M3 - Conference contribution

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 361

EP - 364

BT - 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings

A2 - Gal, Michael

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Chuang HM, Lin KW, Chen CY, Chen JY, Kao CI, Liu W-C. On the n + -InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) In Gal M, editor, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2002. p. 361-364. 1237265. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2002.1237265