On the n+-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET)

H. M. Chuang; K. W. Lin; C. Y. Chen; J. Y. Chen; C. I. Kao; W. C. Liu

doi:10.1109/COMMAD.2002.1237265

On the n⁺-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET)

H. M. Chuang, K. W. Lin, C. Y. Chen, J. Y. Chen, C. I. Kao, W. C. Liu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An interesting n⁺-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) is fabricated and studied, In the n⁺-InGaAs/n-GaAs CDC structure, the narrow InGaAs layer is used to introduce the channel quantization effect. Thus, the effective energy-gap of InGaAs channel can be increased. In addition, the n-GaAs channel can improve the operation capability under higher electric field. Therefore, the impact ionization effect can be avoided. Experimentally, the studied device shows good DC and microwave performances with flat and wide operation regime.

Original language	English
Title of host publication	2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
Editors	Michael Gal
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	361-364
Number of pages	4
ISBN (Electronic)	0780375718
DOIs	https://doi.org/10.1109/COMMAD.2002.1237265
Publication status	Published - 2002
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia Duration: 2002 Dec 11 → 2002 Dec 13

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume	2002-January

Other

Other	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Country/Territory	Australia
City	Sydney
Period	02-12-11 → 02-12-13

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/COMMAD.2002.1237265

Cite this

Chuang, H. M., Lin, K. W., Chen, C. Y., Chen, J. Y., Kao, C. I., & Liu, W. C. (2002). On the n⁺-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET). In M. Gal (Ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings (pp. 361-364). [1237265] (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2002.1237265

Chuang, H. M. ; Lin, K. W. ; Chen, C. Y. et al. / On the n⁺-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET). 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. editor / Michael Gal. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 361-364 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

@inproceedings{7720084d0ee54625ac144447b5327362,

title = "On the n+-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET)",

abstract = "An interesting n+-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) is fabricated and studied, In the n+-InGaAs/n-GaAs CDC structure, the narrow InGaAs layer is used to introduce the channel quantization effect. Thus, the effective energy-gap of InGaAs channel can be increased. In addition, the n-GaAs channel can improve the operation capability under higher electric field. Therefore, the impact ionization effect can be avoided. Experimentally, the studied device shows good DC and microwave performances with flat and wide operation regime.",

author = "Chuang, {H. M.} and Lin, {K. W.} and Chen, {C. Y.} and Chen, {J. Y.} and Kao, {C. I.} and Liu, {W. C.}",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 ; Conference date: 11-12-2002 Through 13-12-2002",

year = "2002",

doi = "10.1109/COMMAD.2002.1237265",

language = "English",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "361--364",

editor = "Michael Gal",

booktitle = "2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings",

address = "United States",

}

Chuang, HM, Lin, KW, Chen, CY, Chen, JY, Kao, CI & Liu, WC 2002, On the n⁺-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET). in M Gal (ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings., 1237265, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, vol. 2002-January, Institute of Electrical and Electronics Engineers Inc., pp. 361-364, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002, Sydney, Australia, 02-12-11. https://doi.org/10.1109/COMMAD.2002.1237265

On the n⁺-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET). / Chuang, H. M.; Lin, K. W.; Chen, C. Y. et al.

2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. ed. / Michael Gal. Institute of Electrical and Electronics Engineers Inc., 2002. p. 361-364 1237265 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - On the n+-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET)

AU - Chuang, H. M.

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AU - Chen, J. Y.

AU - Kao, C. I.

AU - Liu, W. C.

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N2 - An interesting n+-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) is fabricated and studied, In the n+-InGaAs/n-GaAs CDC structure, the narrow InGaAs layer is used to introduce the channel quantization effect. Thus, the effective energy-gap of InGaAs channel can be increased. In addition, the n-GaAs channel can improve the operation capability under higher electric field. Therefore, the impact ionization effect can be avoided. Experimentally, the studied device shows good DC and microwave performances with flat and wide operation regime.

AB - An interesting n+-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) is fabricated and studied, In the n+-InGaAs/n-GaAs CDC structure, the narrow InGaAs layer is used to introduce the channel quantization effect. Thus, the effective energy-gap of InGaAs channel can be increased. In addition, the n-GaAs channel can improve the operation capability under higher electric field. Therefore, the impact ionization effect can be avoided. Experimentally, the studied device shows good DC and microwave performances with flat and wide operation regime.

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BT - 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings

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Chuang HM, Lin KW, Chen CY, Chen JY, Kao CI, Liu WC. On the n⁺-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET). In Gal M, editor, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2002. p. 361-364. 1237265. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2002.1237265