TY - GEN
T1 - On the n+-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET)
AU - Chuang, H. M.
AU - Lin, K. W.
AU - Chen, C. Y.
AU - Chen, J. Y.
AU - Kao, C. I.
AU - Liu, W. C.
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - An interesting n+-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) is fabricated and studied, In the n+-InGaAs/n-GaAs CDC structure, the narrow InGaAs layer is used to introduce the channel quantization effect. Thus, the effective energy-gap of InGaAs channel can be increased. In addition, the n-GaAs channel can improve the operation capability under higher electric field. Therefore, the impact ionization effect can be avoided. Experimentally, the studied device shows good DC and microwave performances with flat and wide operation regime.
AB - An interesting n+-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) is fabricated and studied, In the n+-InGaAs/n-GaAs CDC structure, the narrow InGaAs layer is used to introduce the channel quantization effect. Thus, the effective energy-gap of InGaAs channel can be increased. In addition, the n-GaAs channel can improve the operation capability under higher electric field. Therefore, the impact ionization effect can be avoided. Experimentally, the studied device shows good DC and microwave performances with flat and wide operation regime.
UR - http://www.scopus.com/inward/record.url?scp=84952662033&partnerID=8YFLogxK
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U2 - 10.1109/COMMAD.2002.1237265
DO - 10.1109/COMMAD.2002.1237265
M3 - Conference contribution
AN - SCOPUS:84952662033
T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
SP - 361
EP - 364
BT - 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
A2 - Gal, Michael
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Y2 - 11 December 2002 through 13 December 2002
ER -