On the nature of the silicon activation efficiency in liquid-encapsulated Czochralski-grown GaAs by photoluminescence

A. Bindal, K. L. Wang, S. J. Chang, M. A. Kallel, O. M. Stafsudd

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The shallow defect evolution in Si-implanted and -annealed liquid-encapsulated Czochralski-grown GaAs is investigated by photoluminescence experiments. Three major emission lines are found. The first emission line located at 1.492 eV corresponds to the SiGa-CAs radiative recombination. The remaining two lines located at 1.44 and 1.40 eV are shown to correspond to GaI-SiAs and VAs-SiAs radiative recombinations, respectively. The effects of these three shallow centers on the silicon activation efficiency are discussed with respect to different annealing and implantation conditions.

Original languageEnglish
Pages (from-to)1246-1252
Number of pages7
JournalJournal of Applied Physics
Volume65
Issue number3
DOIs
Publication statusPublished - 1989 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'On the nature of the silicon activation efficiency in liquid-encapsulated Czochralski-grown GaAs by photoluminescence'. Together they form a unique fingerprint.

  • Cite this