On the nature of the silicon activation efficiency in liquid-encapsulated Czochralski-grown GaAs by photoluminescence

A. Bindal; K. L. Wang; S. J. Chang; M. A. Kallel; O. M. Stafsudd

doi:10.1063/1.343017

On the nature of the silicon activation efficiency in liquid-encapsulated Czochralski-grown GaAs by photoluminescence

A. Bindal, K. L. Wang, S. J. Chang, M. A. Kallel, O. M. Stafsudd

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Abstract

The shallow defect evolution in Si-implanted and -annealed liquid-encapsulated Czochralski-grown GaAs is investigated by photoluminescence experiments. Three major emission lines are found. The first emission line located at 1.492 eV corresponds to the Si_Ga-C_As radiative recombination. The remaining two lines located at 1.44 and 1.40 eV are shown to correspond to Ga_I-Si_As and V_As-Si_As radiative recombinations, respectively. The effects of these three shallow centers on the silicon activation efficiency are discussed with respect to different annealing and implantation conditions.

Original language	English
Pages (from-to)	1246-1252
Number of pages	7
Journal	Journal of Applied Physics
Volume	65
Issue number	3
DOIs	https://doi.org/10.1063/1.343017
Publication status	Published - 1989

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.343017

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@article{ea2ace9f846d4455bbe108fe39700d84,

title = "On the nature of the silicon activation efficiency in liquid-encapsulated Czochralski-grown GaAs by photoluminescence",

abstract = "The shallow defect evolution in Si-implanted and -annealed liquid-encapsulated Czochralski-grown GaAs is investigated by photoluminescence experiments. Three major emission lines are found. The first emission line located at 1.492 eV corresponds to the SiGa-CAs radiative recombination. The remaining two lines located at 1.44 and 1.40 eV are shown to correspond to GaI-SiAs and VAs-SiAs radiative recombinations, respectively. The effects of these three shallow centers on the silicon activation efficiency are discussed with respect to different annealing and implantation conditions.",

author = "A. Bindal and Wang, {K. L.} and Chang, {S. J.} and Kallel, {M. A.} and Stafsudd, {O. M.}",

year = "1989",

doi = "10.1063/1.343017",

language = "English",

volume = "65",

pages = "1246--1252",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - On the nature of the silicon activation efficiency in liquid-encapsulated Czochralski-grown GaAs by photoluminescence

AU - Bindal, A.

AU - Wang, K. L.

AU - Chang, S. J.

AU - Kallel, M. A.

AU - Stafsudd, O. M.

PY - 1989

Y1 - 1989

N2 - The shallow defect evolution in Si-implanted and -annealed liquid-encapsulated Czochralski-grown GaAs is investigated by photoluminescence experiments. Three major emission lines are found. The first emission line located at 1.492 eV corresponds to the SiGa-CAs radiative recombination. The remaining two lines located at 1.44 and 1.40 eV are shown to correspond to GaI-SiAs and VAs-SiAs radiative recombinations, respectively. The effects of these three shallow centers on the silicon activation efficiency are discussed with respect to different annealing and implantation conditions.

AB - The shallow defect evolution in Si-implanted and -annealed liquid-encapsulated Czochralski-grown GaAs is investigated by photoluminescence experiments. Three major emission lines are found. The first emission line located at 1.492 eV corresponds to the SiGa-CAs radiative recombination. The remaining two lines located at 1.44 and 1.40 eV are shown to correspond to GaI-SiAs and VAs-SiAs radiative recombinations, respectively. The effects of these three shallow centers on the silicon activation efficiency are discussed with respect to different annealing and implantation conditions.

UR - http://www.scopus.com/inward/record.url?scp=0038140762&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038140762&partnerID=8YFLogxK

U2 - 10.1063/1.343017

DO - 10.1063/1.343017

M3 - Article

AN - SCOPUS:0038140762

SN - 0021-8979

VL - 65

SP - 1246

EP - 1252

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

On the nature of the silicon activation efficiency in liquid-encapsulated Czochralski-grown GaAs by photoluminescence

Abstract

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