On the n+-GaAs/δ(p+)-GaInP/n-GaAs high breakdown voltage field-effect transistor

Wen Lung Chang, Shiou Ying Cheng, Yung Hsin Shie, Hsi Jen Pan, Wen Shiung Lour, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


A newly designed n+-GaAs/δ(p+)-GaInP/n-GaAs camel-type field-effect transistor (CAMFET) with a triple-step doped channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V and breakdown voltage of 40 V and the very low gate leakage current of 400 μA mm-1 are obtained for the studied CAMFET. In addition, good transistor properties are obtained. The measured current gain cut-off frequency fT and the maximum oscillation frequency fmax for a 1 μm gate device are 17 and 31 GHz, respectively. Based on experimental results, the studied device shows promise for circuit applications.

Original languageEnglish
Pages (from-to)307-311
Number of pages5
JournalSemiconductor Science and Technology
Issue number4
Publication statusPublished - 1999 Apr 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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