On the n+-GaAs/p+-InGaP/n--GaAs high-barrier camel-like gate transistor for high-breakdown, low-leakage and high-temperature operations

W. C. Liu; K. H. Yu; H. M. Chuang; K. W. Lin; K. M. Lee; S. F. Tsai

doi:10.1109/ESSDERC.2002.194908

On the n⁺-GaAs/p⁺-InGaP/n^--GaAs high-barrier camel-like gate transistor for high-breakdown, low-leakage and high-temperature operations

W. C. Liu, K. H. Yu, H. M. Chuang, K. W. Lin, K. M. Lee, S. F. Tsai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new field-effect transistor using an n⁺-GaAs/p⁺-InGaP/n-GaAs high-barrier camel-like gate and GaAs/InGaAs heterostructure-channel has been fabricated successfully and demonstrated. Experimentally, an ultra high gate-drain breakdown voltage of 52 V and a high drain-source operation voltage over 20 V with low leakage currents are obtained for a 1×100μm² device. Furthermore, the studied device also shows high breakdown behaviors at high temperature environment and good microwave characteristics. Therefore, based on these good characteristics, the studied device is suitable for high-breakdown, low-leakage and high-temperature applications.

Original language	English
Title of host publication	European Solid-State Device Research Conference
Editors	Elena Gnani, Giorgio Baccarani, Massimo Rudan
Publisher	IEEE Computer Society
Pages	215-218
Number of pages	4
ISBN (Electronic)	8890084782
DOIs	https://doi.org/10.1109/ESSDERC.2002.194908
Publication status	Published - 2002
Event	32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy Duration: 2002 Sept 24 → 2002 Sept 26

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Other

Other	32nd European Solid-State Device Research Conference, ESSDERC 2002
Country/Territory	Italy
City	Firenze
Period	02-09-24 → 02-09-26

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Access to Document

10.1109/ESSDERC.2002.194908

Cite this

Liu, W. C., Yu, K. H., Chuang, H. M., Lin, K. W., Lee, K. M., & Tsai, S. F. (2002). On the n⁺-GaAs/p⁺-InGaP/n^--GaAs high-barrier camel-like gate transistor for high-breakdown, low-leakage and high-temperature operations. In E. Gnani, G. Baccarani, & M. Rudan (Eds.), European Solid-State Device Research Conference (pp. 215-218). (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2002.194908

Liu, W. C. ; Yu, K. H. ; Chuang, H. M. et al. / On the n⁺-GaAs/p⁺-InGaP/n^--GaAs high-barrier camel-like gate transistor for high-breakdown, low-leakage and high-temperature operations. European Solid-State Device Research Conference. editor / Elena Gnani ; Giorgio Baccarani ; Massimo Rudan. IEEE Computer Society, 2002. pp. 215-218 (European Solid-State Device Research Conference).

@inproceedings{dc2c0087cb954f7e8a7ebef33ca28a52,

title = "On the n+-GaAs/p+-InGaP/n--GaAs high-barrier camel-like gate transistor for high-breakdown, low-leakage and high-temperature operations",

abstract = "A new field-effect transistor using an n+-GaAs/p+-InGaP/n-GaAs high-barrier camel-like gate and GaAs/InGaAs heterostructure-channel has been fabricated successfully and demonstrated. Experimentally, an ultra high gate-drain breakdown voltage of 52 V and a high drain-source operation voltage over 20 V with low leakage currents are obtained for a 1×100μm2 device. Furthermore, the studied device also shows high breakdown behaviors at high temperature environment and good microwave characteristics. Therefore, based on these good characteristics, the studied device is suitable for high-breakdown, low-leakage and high-temperature applications.",

author = "Liu, {W. C.} and Yu, {K. H.} and Chuang, {H. M.} and Lin, {K. W.} and Lee, {K. M.} and Tsai, {S. F.}",

year = "2002",

doi = "10.1109/ESSDERC.2002.194908",

language = "English",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "215--218",

editor = "Elena Gnani and Giorgio Baccarani and Massimo Rudan",

booktitle = "European Solid-State Device Research Conference",

address = "United States",

note = "32nd European Solid-State Device Research Conference, ESSDERC 2002 ; Conference date: 24-09-2002 Through 26-09-2002",

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Liu, WC, Yu, KH, Chuang, HM, Lin, KW, Lee, KM & Tsai, SF 2002, On the n⁺-GaAs/p⁺-InGaP/n^--GaAs high-barrier camel-like gate transistor for high-breakdown, low-leakage and high-temperature operations. in E Gnani, G Baccarani & M Rudan (eds), European Solid-State Device Research Conference. European Solid-State Device Research Conference, IEEE Computer Society, pp. 215-218, 32nd European Solid-State Device Research Conference, ESSDERC 2002, Firenze, Italy, 02-09-24. https://doi.org/10.1109/ESSDERC.2002.194908

On the n⁺-GaAs/p⁺-InGaP/n^--GaAs high-barrier camel-like gate transistor for high-breakdown, low-leakage and high-temperature operations. / Liu, W. C.; Yu, K. H.; Chuang, H. M. et al.
European Solid-State Device Research Conference. ed. / Elena Gnani; Giorgio Baccarani; Massimo Rudan. IEEE Computer Society, 2002. p. 215-218 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Liu, W. C.

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AB - A new field-effect transistor using an n+-GaAs/p+-InGaP/n-GaAs high-barrier camel-like gate and GaAs/InGaAs heterostructure-channel has been fabricated successfully and demonstrated. Experimentally, an ultra high gate-drain breakdown voltage of 52 V and a high drain-source operation voltage over 20 V with low leakage currents are obtained for a 1×100μm2 device. Furthermore, the studied device also shows high breakdown behaviors at high temperature environment and good microwave characteristics. Therefore, based on these good characteristics, the studied device is suitable for high-breakdown, low-leakage and high-temperature applications.

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Liu WC, Yu KH, Chuang HM, Lin KW, Lee KM, Tsai SF. On the n⁺-GaAs/p⁺-InGaP/n^--GaAs high-barrier camel-like gate transistor for high-breakdown, low-leakage and high-temperature operations. In Gnani E, Baccarani G, Rudan M, editors, European Solid-State Device Research Conference. IEEE Computer Society. 2002. p. 215-218. (European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2002.194908