On the n+-GaAs/p+-InGaP/n--GaAs high-barrier camel-like gate transistor for high-breakdown, low-leakage and high-temperature operations

Wen-Chau Liu, K. H. Yu, H. M. Chuang, K. W. Lin, K. M. Lee, S. F. Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new field-effect transistor using an n+-GaAs/p+-InGaP/n-GaAs high-barrier camel-like gate and GaAs/InGaAs heterostructure-channel has been fabricated successfully and demonstrated. Experimentally, an ultra high gate-drain breakdown voltage of 52 V and a high drain-source operation voltage over 20 V with low leakage currents are obtained for a 1×100μm2 device. Furthermore, the studied device also shows high breakdown behaviors at high temperature environment and good microwave characteristics. Therefore, based on these good characteristics, the studied device is suitable for high-breakdown, low-leakage and high-temperature applications.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsElena Gnani, Giorgio Baccarani, Massimo Rudan
PublisherIEEE Computer Society
Pages215-218
Number of pages4
ISBN (Electronic)8890084782
DOIs
Publication statusPublished - 2002 Jan 1
Event32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy
Duration: 2002 Sep 242002 Sep 26

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other32nd European Solid-State Device Research Conference, ESSDERC 2002
CountryItaly
CityFirenze
Period02-09-2402-09-26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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  • Cite this

    Liu, W-C., Yu, K. H., Chuang, H. M., Lin, K. W., Lee, K. M., & Tsai, S. F. (2002). On the n+-GaAs/p+-InGaP/n--GaAs high-barrier camel-like gate transistor for high-breakdown, low-leakage and high-temperature operations. In E. Gnani, G. Baccarani, & M. Rudan (Eds.), European Solid-State Device Research Conference (pp. 215-218). (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2002.194908