On the n+-GaAs/p+-InGaP/n--GaAs high-barrier camel-like gate transistor for high-breakdown, low-leakage and high-temperature operations

W. C. Liu, K. H. Yu, H. M. Chuang, K. W. Lin, K. M. Lee, S. F. Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering & Materials Science