On the pseudomorphic high electron mobility transistors (PHEMTs) with a low-temperature gate approach

Li Yang Chen; Huey Ing Chen; Shiou Ying Cheng; Tzu Pin Chen; Tsung Han Tsai; Yi Jung Liu; Yi Wen Huang; Chien Chang Huang; Wen Chau Liu

doi:10.1109/LED.2009.2014788

On the pseudomorphic high electron mobility transistors (PHEMTs) with a low-temperature gate approach

Li Yang Chen, Huey Ing Chen, Shiou Ying Cheng, Tzu Pin Chen, Tsung Han Tsai, Yi Jung Liu, Yi Wen Huang, Chien Chang Huang, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The characteristics of AlGaAs/InGaAs/GaAs depletion-mode (D-mode) and enhancement-mode (E-mode) pseudomorphic high electron mobility transistors (PHEMTs) fabricated using an electroless-plated (EP) deposition approach are investigated. Under the low-temperature and low-energy conditions, the EP deposition approach can form a better metal-semiconductor interface. For the studied devices, with 1 × 100 μ² gate dimension, excellent characteristics of the maximum drain saturation current (168.9 mA/mm) and extrinsic transconductance (225.8 mS/mm) are obtained for the D-mode device. The corresponding values for the E-mode device are 152.5 mA/mm and 211.7 mS/ mm, respectively. Moreover, the EP approach also has the advantages of easy operation and low cost.

Original language	English
Pages (from-to)	325-327
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	4
DOIs	https://doi.org/10.1109/LED.2009.2014788
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2009.2014788

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@article{f2e70c381cd04f5d8b349126c8a1dee7,

title = "On the pseudomorphic high electron mobility transistors (PHEMTs) with a low-temperature gate approach",

abstract = "The characteristics of AlGaAs/InGaAs/GaAs depletion-mode (D-mode) and enhancement-mode (E-mode) pseudomorphic high electron mobility transistors (PHEMTs) fabricated using an electroless-plated (EP) deposition approach are investigated. Under the low-temperature and low-energy conditions, the EP deposition approach can form a better metal-semiconductor interface. For the studied devices, with 1 × 100 μ2 gate dimension, excellent characteristics of the maximum drain saturation current (168.9 mA/mm) and extrinsic transconductance (225.8 mS/mm) are obtained for the D-mode device. The corresponding values for the E-mode device are 152.5 mA/mm and 211.7 mS/ mm, respectively. Moreover, the EP approach also has the advantages of easy operation and low cost.",

author = "Chen, {Li Yang} and Chen, {Huey Ing} and Cheng, {Shiou Ying} and Chen, {Tzu Pin} and Tsai, {Tsung Han} and Liu, {Yi Jung} and Huang, {Yi Wen} and Huang, {Chien Chang} and Liu, {Wen Chau}",

note = "Funding Information: Manuscript received October 29, 2008; revised January 22, 2009. Current version published March 25, 2009. This work was supported in part by the National Science Council of the Republic of China under Contracts NSC 97-2221-E-006-238-MY3 and NSC-97-2221-E-197-027. The review of this letter was arranged by Editor J. A. del Alamo.",

year = "2009",

doi = "10.1109/LED.2009.2014788",

language = "English",

volume = "30",

pages = "325--327",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - On the pseudomorphic high electron mobility transistors (PHEMTs) with a low-temperature gate approach

AU - Chen, Li Yang

AU - Chen, Huey Ing

AU - Cheng, Shiou Ying

AU - Chen, Tzu Pin

AU - Tsai, Tsung Han

AU - Liu, Yi Jung

AU - Huang, Yi Wen

AU - Huang, Chien Chang

AU - Liu, Wen Chau

N1 - Funding Information: Manuscript received October 29, 2008; revised January 22, 2009. Current version published March 25, 2009. This work was supported in part by the National Science Council of the Republic of China under Contracts NSC 97-2221-E-006-238-MY3 and NSC-97-2221-E-197-027. The review of this letter was arranged by Editor J. A. del Alamo.

PY - 2009

Y1 - 2009

N2 - The characteristics of AlGaAs/InGaAs/GaAs depletion-mode (D-mode) and enhancement-mode (E-mode) pseudomorphic high electron mobility transistors (PHEMTs) fabricated using an electroless-plated (EP) deposition approach are investigated. Under the low-temperature and low-energy conditions, the EP deposition approach can form a better metal-semiconductor interface. For the studied devices, with 1 × 100 μ2 gate dimension, excellent characteristics of the maximum drain saturation current (168.9 mA/mm) and extrinsic transconductance (225.8 mS/mm) are obtained for the D-mode device. The corresponding values for the E-mode device are 152.5 mA/mm and 211.7 mS/ mm, respectively. Moreover, the EP approach also has the advantages of easy operation and low cost.

AB - The characteristics of AlGaAs/InGaAs/GaAs depletion-mode (D-mode) and enhancement-mode (E-mode) pseudomorphic high electron mobility transistors (PHEMTs) fabricated using an electroless-plated (EP) deposition approach are investigated. Under the low-temperature and low-energy conditions, the EP deposition approach can form a better metal-semiconductor interface. For the studied devices, with 1 × 100 μ2 gate dimension, excellent characteristics of the maximum drain saturation current (168.9 mA/mm) and extrinsic transconductance (225.8 mS/mm) are obtained for the D-mode device. The corresponding values for the E-mode device are 152.5 mA/mm and 211.7 mS/ mm, respectively. Moreover, the EP approach also has the advantages of easy operation and low cost.

UR - http://www.scopus.com/inward/record.url?scp=67349127530&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67349127530&partnerID=8YFLogxK

U2 - 10.1109/LED.2009.2014788

DO - 10.1109/LED.2009.2014788

M3 - Article

AN - SCOPUS:67349127530

SN - 0741-3106

VL - 30

SP - 325

EP - 327

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

On the pseudomorphic high electron mobility transistors (PHEMTs) with a low-temperature gate approach

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