On the pseudomorphic high electron mobility transistors (PHEMTs) with a low-temperature gate approach

Li Yang Chen, Huey Ing Chen, Shiou Ying Cheng, Tzu Pin Chen, Tsung Han Tsai, Yi Jung Liu, Yi Wen Huang, Chien Chang Huang, Wen Chau Liu

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8 Citations (Scopus)

Abstract

The characteristics of AlGaAs/InGaAs/GaAs depletion-mode (D-mode) and enhancement-mode (E-mode) pseudomorphic high electron mobility transistors (PHEMTs) fabricated using an electroless-plated (EP) deposition approach are investigated. Under the low-temperature and low-energy conditions, the EP deposition approach can form a better metal-semiconductor interface. For the studied devices, with 1 × 100 μ2 gate dimension, excellent characteristics of the maximum drain saturation current (168.9 mA/mm) and extrinsic transconductance (225.8 mS/mm) are obtained for the D-mode device. The corresponding values for the E-mode device are 152.5 mA/mm and 211.7 mS/ mm, respectively. Moreover, the EP approach also has the advantages of easy operation and low cost.

Original languageEnglish
Pages (from-to)325-327
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number4
DOIs
Publication statusPublished - 2009 Mar 10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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