On the pseudomorphic high electron mobility transistors (PHEMTs) with a low-temperature gate approach

Li Yang Chen; Huey Ing Chen; Shiou Ying Cheng; Tzu Pin Chen; Tsung Han Tsai; Yi Jung Liu; Yi Wen Huang; Chien Chang Huang; Wen Chau Liu

doi:10.1109/LED.2009.2014788

On the pseudomorphic high electron mobility transistors (PHEMTs) with a low-temperature gate approach

Li Yang Chen
, Huey Ing Chen
, Shiou Ying Cheng
, Tzu Pin Chen
, Tsung Han Tsai
, Yi Jung Liu
, Yi Wen Huang
, Chien Chang Huang
, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The characteristics of AlGaAs/InGaAs/GaAs depletion-mode (D-mode) and enhancement-mode (E-mode) pseudomorphic high electron mobility transistors (PHEMTs) fabricated using an electroless-plated (EP) deposition approach are investigated. Under the low-temperature and low-energy conditions, the EP deposition approach can form a better metal-semiconductor interface. For the studied devices, with 1 × 100 μ² gate dimension, excellent characteristics of the maximum drain saturation current (168.9 mA/mm) and extrinsic transconductance (225.8 mS/mm) are obtained for the D-mode device. The corresponding values for the E-mode device are 152.5 mA/mm and 211.7 mS/ mm, respectively. Moreover, the EP approach also has the advantages of easy operation and low cost.

Original language	English
Pages (from-to)	325-327
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	4
DOIs	https://doi.org/10.1109/LED.2009.2014788
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2009.2014788

Cite this

@article{f2e70c381cd04f5d8b349126c8a1dee7,

title = "On the pseudomorphic high electron mobility transistors (PHEMTs) with a low-temperature gate approach",

abstract = "The characteristics of AlGaAs/InGaAs/GaAs depletion-mode (D-mode) and enhancement-mode (E-mode) pseudomorphic high electron mobility transistors (PHEMTs) fabricated using an electroless-plated (EP) deposition approach are investigated. Under the low-temperature and low-energy conditions, the EP deposition approach can form a better metal-semiconductor interface. For the studied devices, with 1 × 100 μ2 gate dimension, excellent characteristics of the maximum drain saturation current (168.9 mA/mm) and extrinsic transconductance (225.8 mS/mm) are obtained for the D-mode device. The corresponding values for the E-mode device are 152.5 mA/mm and 211.7 mS/ mm, respectively. Moreover, the EP approach also has the advantages of easy operation and low cost.",

author = "Chen, \{Li Yang\} and Chen, \{Huey Ing\} and Cheng, \{Shiou Ying\} and Chen, \{Tzu Pin\} and Tsai, \{Tsung Han\} and Liu, \{Yi Jung\} and Huang, \{Yi Wen\} and Huang, \{Chien Chang\} and Liu, \{Wen Chau\}",

note = "Funding Information: Manuscript received October 29, 2008; revised January 22, 2009. Current version published March 25, 2009. This work was supported in part by the National Science Council of the Republic of China under Contracts NSC 97-2221-E-006-238-MY3 and NSC-97-2221-E-197-027. The review of this letter was arranged by Editor J. A. del Alamo.",

year = "2009",

doi = "10.1109/LED.2009.2014788",

language = "English",

volume = "30",

pages = "325--327",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - On the pseudomorphic high electron mobility transistors (PHEMTs) with a low-temperature gate approach

AU - Chen, Li Yang

AU - Chen, Huey Ing

AU - Cheng, Shiou Ying

AU - Chen, Tzu Pin

AU - Tsai, Tsung Han

AU - Liu, Yi Jung

AU - Huang, Yi Wen

AU - Huang, Chien Chang

AU - Liu, Wen Chau

N1 - Funding Information: Manuscript received October 29, 2008; revised January 22, 2009. Current version published March 25, 2009. This work was supported in part by the National Science Council of the Republic of China under Contracts NSC 97-2221-E-006-238-MY3 and NSC-97-2221-E-197-027. The review of this letter was arranged by Editor J. A. del Alamo.

PY - 2009

Y1 - 2009

N2 - The characteristics of AlGaAs/InGaAs/GaAs depletion-mode (D-mode) and enhancement-mode (E-mode) pseudomorphic high electron mobility transistors (PHEMTs) fabricated using an electroless-plated (EP) deposition approach are investigated. Under the low-temperature and low-energy conditions, the EP deposition approach can form a better metal-semiconductor interface. For the studied devices, with 1 × 100 μ2 gate dimension, excellent characteristics of the maximum drain saturation current (168.9 mA/mm) and extrinsic transconductance (225.8 mS/mm) are obtained for the D-mode device. The corresponding values for the E-mode device are 152.5 mA/mm and 211.7 mS/ mm, respectively. Moreover, the EP approach also has the advantages of easy operation and low cost.

AB - The characteristics of AlGaAs/InGaAs/GaAs depletion-mode (D-mode) and enhancement-mode (E-mode) pseudomorphic high electron mobility transistors (PHEMTs) fabricated using an electroless-plated (EP) deposition approach are investigated. Under the low-temperature and low-energy conditions, the EP deposition approach can form a better metal-semiconductor interface. For the studied devices, with 1 × 100 μ2 gate dimension, excellent characteristics of the maximum drain saturation current (168.9 mA/mm) and extrinsic transconductance (225.8 mS/mm) are obtained for the D-mode device. The corresponding values for the E-mode device are 152.5 mA/mm and 211.7 mS/ mm, respectively. Moreover, the EP approach also has the advantages of easy operation and low cost.

UR - https://www.scopus.com/pages/publications/67349127530

UR - https://www.scopus.com/pages/publications/67349127530#tab=citedBy

U2 - 10.1109/LED.2009.2014788

DO - 10.1109/LED.2009.2014788

M3 - Article

AN - SCOPUS:67349127530

SN - 0741-3106

VL - 30

SP - 325

EP - 327

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

On the pseudomorphic high electron mobility transistors (PHEMTs) with a low-temperature gate approach

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