TY - JOUR
T1 - On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBTs)
AU - Tsai, Jung Hui
AU - Laih, Lih Wen
AU - Shih, Hui Jung
AU - Liu, Wen Chau
AU - Lin, Hao Hsiung
N1 - Funding Information:
Acknowledgement-This study was supported by the National ScienceC ouncil of the Republic of China under contractn o. NSC U-2215 -E-006-023.
PY - 1996/12
Y1 - 1996/12
N2 - In this paper, we will demonstrate the effect of recombination current on the electrical properties of heterostructure-emitter bipolar transistors (HEBTs). For comparison, an AlGaAs/GaAs and an AlInAs/GaInAs HEBT are fabricated with the same layer structure. The theoretical analysis shows that the neutral-emitter recombination current in the neutral emitter regime is a significant factor for determining transistor characteristics. For the AlGaAs/GaAs HEBT, the hole diffusion length is larger than the emitter thickness, so that most of holes can be reflected back at the confinement layer due to the hole recombination current being low in the neuter-emitter region. Thus, the high emitter injection efficiency and current gain can be achieved simultaneously. On the other hand, for the AlInAs/GaInAs HEBT, the increase of recombination current at neutral emitter regime and the existence of potential spike could reduce the emitter injection efficiency at large VBE voltage. Hence, the non-1KT component of collector current is enhanced and the characteristics of transistor are degraded. However, a lower offset voltage of 40 mV is obtained attributed to the low base surface recombination current for the AlInAs/GaInAs HEBT. All of these experimental results are consistent with the theoretical analysis.
AB - In this paper, we will demonstrate the effect of recombination current on the electrical properties of heterostructure-emitter bipolar transistors (HEBTs). For comparison, an AlGaAs/GaAs and an AlInAs/GaInAs HEBT are fabricated with the same layer structure. The theoretical analysis shows that the neutral-emitter recombination current in the neutral emitter regime is a significant factor for determining transistor characteristics. For the AlGaAs/GaAs HEBT, the hole diffusion length is larger than the emitter thickness, so that most of holes can be reflected back at the confinement layer due to the hole recombination current being low in the neuter-emitter region. Thus, the high emitter injection efficiency and current gain can be achieved simultaneously. On the other hand, for the AlInAs/GaInAs HEBT, the increase of recombination current at neutral emitter regime and the existence of potential spike could reduce the emitter injection efficiency at large VBE voltage. Hence, the non-1KT component of collector current is enhanced and the characteristics of transistor are degraded. However, a lower offset voltage of 40 mV is obtained attributed to the low base surface recombination current for the AlInAs/GaInAs HEBT. All of these experimental results are consistent with the theoretical analysis.
UR - http://www.scopus.com/inward/record.url?scp=0030406970&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030406970&partnerID=8YFLogxK
U2 - 10.1016/S0038-1101(96)00121-9
DO - 10.1016/S0038-1101(96)00121-9
M3 - Article
AN - SCOPUS:0030406970
SN - 0038-1101
VL - 39
SP - 1723
EP - 1730
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 12
ER -