TY - JOUR
T1 - On the step-graded doped-channel (SGDC) field-effect transistor
AU - Lin, Kun Wei
AU - Chang, Wen Lung
AU - Yu, Kuo Hui
AU - Chang, Chin Chuan
AU - Wang, Wei Chou
AU - Pan, Hsi Jen
AU - Liu, Wen Chau
AU - Laih, Lih Wen
N1 - Funding Information:
Acknowledgement—This work was supposed by the National Science Council of the People’s Republic of China under the Contract No. NSC. 87-2215-E-006-020.
PY - 1999/11
Y1 - 1999/11
N2 - An i-InGaP/n-InxGa1-xAs/i-GaAs step-graded doped-channel field-effect transistor (SGDCFET) has been fabricated and studied. Due to the existence of a V-shaped energy band formed by the step-graded structure, a large output current density, a large gate voltage swing with high average transconductance, and a high breakdown voltage can be expected. In this study, first, a theoretical model and a transfer matrix technique are employed to analyze the energy states and wavefunctions in the step-graded quantum wells. Experimentally, for a 1×80 μm2 gate dimension device, a maximum drain saturation current density of 830 mA mm-1, a maximum transconductance of 188 mS mm-1, a high gate breakdown voltage of 34 V, and a large gate voltage swing 3.3 V with transconductance larger than 150 mS mm-1 are achieved. These performances show that the device studied has a good potentiality for high-speed, high-power, and large input signal circuit applications.
AB - An i-InGaP/n-InxGa1-xAs/i-GaAs step-graded doped-channel field-effect transistor (SGDCFET) has been fabricated and studied. Due to the existence of a V-shaped energy band formed by the step-graded structure, a large output current density, a large gate voltage swing with high average transconductance, and a high breakdown voltage can be expected. In this study, first, a theoretical model and a transfer matrix technique are employed to analyze the energy states and wavefunctions in the step-graded quantum wells. Experimentally, for a 1×80 μm2 gate dimension device, a maximum drain saturation current density of 830 mA mm-1, a maximum transconductance of 188 mS mm-1, a high gate breakdown voltage of 34 V, and a large gate voltage swing 3.3 V with transconductance larger than 150 mS mm-1 are achieved. These performances show that the device studied has a good potentiality for high-speed, high-power, and large input signal circuit applications.
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U2 - 10.1006/spmi.1999.0788
DO - 10.1006/spmi.1999.0788
M3 - Article
AN - SCOPUS:0033356122
SN - 0749-6036
VL - 26
SP - 343
EP - 350
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
IS - 5
ER -