On the step-graded doped-channel (SGDC) field-effect transistor

Kun Wei Lin, Wen Lung Chang, Kuo Hui Yu, Chin Chuan Chang, Wei Chou Wang, Hsi Jen Pan, Wen Chau Liu, Lih Wen Laih

Research output: Contribution to journalArticlepeer-review

Abstract

An i-InGaP/n-InxGa1-xAs/i-GaAs step-graded doped-channel field-effect transistor (SGDCFET) has been fabricated and studied. Due to the existence of a V-shaped energy band formed by the step-graded structure, a large output current density, a large gate voltage swing with high average transconductance, and a high breakdown voltage can be expected. In this study, first, a theoretical model and a transfer matrix technique are employed to analyze the energy states and wavefunctions in the step-graded quantum wells. Experimentally, for a 1×80 μm2 gate dimension device, a maximum drain saturation current density of 830 mA mm-1, a maximum transconductance of 188 mS mm-1, a high gate breakdown voltage of 34 V, and a large gate voltage swing 3.3 V with transconductance larger than 150 mS mm-1 are achieved. These performances show that the device studied has a good potentiality for high-speed, high-power, and large input signal circuit applications.

Original languageEnglish
Pages (from-to)343-350
Number of pages8
JournalSuperlattices and Microstructures
Volume26
Issue number5
DOIs
Publication statusPublished - 1999 Nov

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'On the step-graded doped-channel (SGDC) field-effect transistor'. Together they form a unique fingerprint.

Cite this