On the temperature-dependent characteristics of a Pd/InAlAs based electroless-plating gate metamorphic heterostructure field-effect transistor (MHFET)

Chien Chang Huang, Huey Ing Chen, Tai You Chen, Chi Shiang Hsu, Chun Chia Chen, Hsuan Sheng Chang, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

In this work, the interesting temperature-dependent characteristics of a Pd/InAlAs based metamorphic heterostructure field-effect transistor (MHFET) with an electroless plating (EP)-gate approach are demonstrated and studied. Based on the low-energy and low-temperature chemical deposition, the EP technique can reduce the thermal damage and disordered-states to form a better metal-semiconductor (MS) interface. The EP-gate device shows better performance including higher turn-on voltage (0.978 V), lower gate leakage current (2.1 μA/mm), higher Schottky barrier height (0.742 eV), lower ideality factor (1.15), higher transconductance (272.4 mS/mm), higher drain saturation current (420.2 mA/mm), wider IDS operating region (291.3 mA/mm), and higher voltage gain (449.7) than a thermal evaporation (TE)-gate one over a wide temperature range (300-420 K).

Original languageEnglish
Pages (from-to)50-55
Number of pages6
JournalSolid-State Electronics
Volume79
DOIs
Publication statusPublished - 2013 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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