On the temperature-dependent characteristics of metamorphic heterostructure field-effect transistors with different Schottky gate metals

Po Hsien Lai, Ssu I. Fu, Ching Wen Hung, Yan Ying Tsai, Tzu Pin Chen, Chun Wei Chen, Yi Wen Huang, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Comprehensive and systematical comparisons of temperature-dependent characteristics of In0.42Al0.58As/In0.46Ga 0.54As metamorphic heterostructure field-effect transistors (MHFETs) with various Schottky gate alloys are studied and demonstrated. The influence of the Schottky barrier height on the impact ionization effect and its associated device performance are also investigated. Better dc and microwave characteristics can be obtained by using the higher metal work function of gate alloys, e.g., Ti/Au, Ni/Au and Pt/Au. In particular, the device with a Pt/Au gate alloy shows the superior device performance in breakdown voltage, threshold voltage, maximum transconductance, output conductance, voltage gain and microwave properties at room temperature. Furthermore, the device with a Ti/Au gate alloy shows the thermally stable performance in threshold voltage, maximum transconductance, output conductance and voltage gain over a wide operating temperature range (from 300 to 510 K). Consequently, the studied devices with appropriate Schottky gate contacts provide the promise for high-speed and high-temperature electronic applications.

Original languageEnglish
Article number004
Pages (from-to)475-480
Number of pages6
JournalSemiconductor Science and Technology
Volume22
Issue number5
DOIs
Publication statusPublished - 2007 May 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'On the temperature-dependent characteristics of metamorphic heterostructure field-effect transistors with different Schottky gate metals'. Together they form a unique fingerprint.

Cite this