On the temperature-dependent electron impact ionizations in a step-graded InAlGaAsInP collector double heterojunction bipolar Transistor

Tzu Pin Chen, Ching Wen Hung, Kuei Yi Chu, Li Yang Chen, Tsung Han Tsai, Shiou Ying Cheng, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

Abstract

The temperature-dependent electron impact ionizations of an InPInGaAs double heterojunction bipolar transistor (DHBT) with a step-graded InAlGaAsInP collector structure are studied and demonstrated from 300 to 400 K. Experimentally, the multiplication factor and electron ionization coefficient are increased with increasing temperature. Furthermore, the studied device shows a lower multiplication factor and weaker temperature dependence as compared with conventional InPInGaAs HBTs. Therefore, the studied DHBT device with a step-graded InAlGaAsInP collector structure provides promise for low-voltage and low-power circuit applications.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume10
Issue number12
DOIs
Publication statusPublished - 2007 Oct 22

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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