On the temperature-dependent electron impact ionizations in a step-graded InAlGaAsInP collector double heterojunction bipolar Transistor

Tzu Pin Chen, Ching Wen Hung, Kuei Yi Chu, Li Yang Chen, Tsung Han Tsai, Shiou Ying Cheng, Wen-Chau Liu

Research output: Contribution to journalArticle

Abstract

The temperature-dependent electron impact ionizations of an InPInGaAs double heterojunction bipolar transistor (DHBT) with a step-graded InAlGaAsInP collector structure are studied and demonstrated from 300 to 400 K. Experimentally, the multiplication factor and electron ionization coefficient are increased with increasing temperature. Furthermore, the studied device shows a lower multiplication factor and weaker temperature dependence as compared with conventional InPInGaAs HBTs. Therefore, the studied DHBT device with a step-graded InAlGaAsInP collector structure provides promise for low-voltage and low-power circuit applications.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume10
Issue number12
DOIs
Publication statusPublished - 2007 Oct 22

Fingerprint

Impact ionization
Heterojunction bipolar transistors
bipolar transistors
accumulators
electron impact
heterojunctions
multiplication
ionization
Electrons
ionization coefficients
Temperature
low voltage
Ionization
temperature
temperature dependence
Networks (circuits)
Electric potential

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Chen, Tzu Pin ; Hung, Ching Wen ; Chu, Kuei Yi ; Chen, Li Yang ; Tsai, Tsung Han ; Cheng, Shiou Ying ; Liu, Wen-Chau. / On the temperature-dependent electron impact ionizations in a step-graded InAlGaAsInP collector double heterojunction bipolar Transistor. In: Electrochemical and Solid-State Letters. 2007 ; Vol. 10, No. 12.
@article{d62928d18bd944d3b4baeeef220d3e6e,
title = "On the temperature-dependent electron impact ionizations in a step-graded InAlGaAsInP collector double heterojunction bipolar Transistor",
abstract = "The temperature-dependent electron impact ionizations of an InPInGaAs double heterojunction bipolar transistor (DHBT) with a step-graded InAlGaAsInP collector structure are studied and demonstrated from 300 to 400 K. Experimentally, the multiplication factor and electron ionization coefficient are increased with increasing temperature. Furthermore, the studied device shows a lower multiplication factor and weaker temperature dependence as compared with conventional InPInGaAs HBTs. Therefore, the studied DHBT device with a step-graded InAlGaAsInP collector structure provides promise for low-voltage and low-power circuit applications.",
author = "Chen, {Tzu Pin} and Hung, {Ching Wen} and Chu, {Kuei Yi} and Chen, {Li Yang} and Tsai, {Tsung Han} and Cheng, {Shiou Ying} and Wen-Chau Liu",
year = "2007",
month = "10",
day = "22",
doi = "10.1149/1.2784145",
language = "English",
volume = "10",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "12",

}

On the temperature-dependent electron impact ionizations in a step-graded InAlGaAsInP collector double heterojunction bipolar Transistor. / Chen, Tzu Pin; Hung, Ching Wen; Chu, Kuei Yi; Chen, Li Yang; Tsai, Tsung Han; Cheng, Shiou Ying; Liu, Wen-Chau.

In: Electrochemical and Solid-State Letters, Vol. 10, No. 12, 22.10.2007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - On the temperature-dependent electron impact ionizations in a step-graded InAlGaAsInP collector double heterojunction bipolar Transistor

AU - Chen, Tzu Pin

AU - Hung, Ching Wen

AU - Chu, Kuei Yi

AU - Chen, Li Yang

AU - Tsai, Tsung Han

AU - Cheng, Shiou Ying

AU - Liu, Wen-Chau

PY - 2007/10/22

Y1 - 2007/10/22

N2 - The temperature-dependent electron impact ionizations of an InPInGaAs double heterojunction bipolar transistor (DHBT) with a step-graded InAlGaAsInP collector structure are studied and demonstrated from 300 to 400 K. Experimentally, the multiplication factor and electron ionization coefficient are increased with increasing temperature. Furthermore, the studied device shows a lower multiplication factor and weaker temperature dependence as compared with conventional InPInGaAs HBTs. Therefore, the studied DHBT device with a step-graded InAlGaAsInP collector structure provides promise for low-voltage and low-power circuit applications.

AB - The temperature-dependent electron impact ionizations of an InPInGaAs double heterojunction bipolar transistor (DHBT) with a step-graded InAlGaAsInP collector structure are studied and demonstrated from 300 to 400 K. Experimentally, the multiplication factor and electron ionization coefficient are increased with increasing temperature. Furthermore, the studied device shows a lower multiplication factor and weaker temperature dependence as compared with conventional InPInGaAs HBTs. Therefore, the studied DHBT device with a step-graded InAlGaAsInP collector structure provides promise for low-voltage and low-power circuit applications.

UR - http://www.scopus.com/inward/record.url?scp=35348891403&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35348891403&partnerID=8YFLogxK

U2 - 10.1149/1.2784145

DO - 10.1149/1.2784145

M3 - Article

VL - 10

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 12

ER -