One-dimensional β-Ga2O3 nanostructures on sapphire (0001): Low-temperature epitaxial nanowires and high-temperature nanorod bundles

Ko Wei Chang, Jih Jen Wu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Well-aligned Ga2O3 nanowires were formed on the sapphire (0001) substrates at temperatures of 650-450 °C using a single precursor of gallium acetylacetonate via a vapor-liquid-solid (VLS) method. Structural analyses reveal that the well-aligned Ga2O3 nanowires are expitaxially grown on the sapphire (0001) with Ga2O3/sapphire orientational relationship [201] [0001] and [211] [1120]. In addition, formation of the flowerlike Ga2O3 nanorod bundles at a temperature of 750 °C via the vapor-solid (VS) mechanism was also demonstrated. Instead of being catalysts in the VLS method, the Au nanoparticles are proposed to play a role in sinking the Ga vapor for forming the nuclei of Ga2O3 nanorods in the VS method.

Original languageEnglish
Pages (from-to)3397-3403
Number of pages7
JournalJournal of Materials Research
Volume20
Issue number12
DOIs
Publication statusPublished - 2005 Dec

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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