Abstract
A novel one-dimensional electron gas field-effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two-dimensional electron gas FET. The FET structure, device operation, and the low-field mobility of impurity scattering, which takes the screening effect into account, are discussed.
Original language | English |
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Pages (from-to) | 1738-1740 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 49 |
Issue number | 25 |
DOIs | |
Publication status | Published - 1986 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)