One-dimensional transport in quantum well wire-high electron mobility transistor

Perng Fei Yuh, K. L. Wang

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


A novel one-dimensional electron gas field-effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two-dimensional electron gas FET. The FET structure, device operation, and the low-field mobility of impurity scattering, which takes the screening effect into account, are discussed.

Original languageEnglish
Pages (from-to)1738-1740
Number of pages3
JournalApplied Physics Letters
Issue number25
Publication statusPublished - 1986

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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