One-dimensional transport in quantum well wire-high electron mobility transistor

Perng Fei Yuh; K. L. Wang

doi:10.1063/1.97232

One-dimensional transport in quantum well wire-high electron mobility transistor

Perng Fei Yuh, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

A novel one-dimensional electron gas field-effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two-dimensional electron gas FET. The FET structure, device operation, and the low-field mobility of impurity scattering, which takes the screening effect into account, are discussed.

Original language	English
Pages (from-to)	1738-1740
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	25
DOIs	https://doi.org/10.1063/1.97232
Publication status	Published - 1986

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.97232

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title = "One-dimensional transport in quantum well wire-high electron mobility transistor",

abstract = "A novel one-dimensional electron gas field-effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two-dimensional electron gas FET. The FET structure, device operation, and the low-field mobility of impurity scattering, which takes the screening effect into account, are discussed.",

author = "Yuh, {Perng Fei} and Wang, {K. L.}",

year = "1986",

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AU - Yuh, Perng Fei

AU - Wang, K. L.

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N2 - A novel one-dimensional electron gas field-effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two-dimensional electron gas FET. The FET structure, device operation, and the low-field mobility of impurity scattering, which takes the screening effect into account, are discussed.

AB - A novel one-dimensional electron gas field-effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two-dimensional electron gas FET. The FET structure, device operation, and the low-field mobility of impurity scattering, which takes the screening effect into account, are discussed.

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DO - 10.1063/1.97232

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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One-dimensional transport in quantum well wire-high electron mobility transistor

Abstract

All Science Journal Classification (ASJC) codes

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