One-dimensional transport of In ₂O ₃ nanowires

The gate-dependent one-dimensional transport of single-crystal In2 O3 nanowire field effect transistors is studied at low temperature by measuring current (I-V) and differential conductance (d Ids d Vds). At a smaller positive gate bias, gaps at near-zero source-drain bias were observed for both current and differential conductance spectra due to the absence of the density of states in the source-drain energy window for a small Vds. The transport can be explained using conventional low-temperature field effect transistor theory. On the other hand, at a large gate bias when the Fermi energy of the nanowire moves up into its conduction band, the differential conductance of the semiconducting In2 O3 nanowire exhibits zero-bias anomalies, following a power-law behavior.