TY - CHAP
T1 - Open issues and future challenges
AU - Nguyen, Thi Dieu Hien
AU - Lin, Shih Yang
AU - Dien, Vo Khuong
AU - Lee, Chi Hsuan
AU - Liu, Hsin Yi
AU - Pham, Hai Duong
AU - Huynh, Thi My Duyen
AU - Han, Nguyen Thi
AU - Tran, Ngoc Thanh Thuy
AU - Li, Wei Bang
AU - Lin, Ming Fa
N1 - Publisher Copyright:
© 2023 Elsevier Inc. All rights reserved.
PY - 2023/1/1
Y1 - 2023/1/1
N2 - The unsolved and emergent research topics are clearly presented in this chapter. Certain of them will be worthy of the systematic investigations, such as, the germanium-/silicon-related solar cells, batteries and intermetallics, and the reliable establishment of the tight-binding models/the generalized tight binding model in the absence/presence of external fields. For example, it is almost impossible to synthesize and examine all the quasi-stable crystal structures of bilayer group-IV materials except for graphene, mainly owing to very complex intralayer/interlayer multi-orbital hybridizations, prominent buckling structures, and ferromagnetic/anti-ferromagnetic spin configurations. The VASP simulations are available in fully exploring the various ground state energies and the featured electronic, optical and magnetic properties. However, the stacking-dependent tight-binding models cannot be obtained from the well-fitting with the VASP calculations, since the low-lying valence and conduction bands are predicted to exhibit the abnormal energy dispersion relations. How to efficiently deal with the diverse quasi-particle behaviors in non-graphene group-IV materials will become the near-future studying focuses, esfpecially for silicon- and germanium-related semiconductors.
AB - The unsolved and emergent research topics are clearly presented in this chapter. Certain of them will be worthy of the systematic investigations, such as, the germanium-/silicon-related solar cells, batteries and intermetallics, and the reliable establishment of the tight-binding models/the generalized tight binding model in the absence/presence of external fields. For example, it is almost impossible to synthesize and examine all the quasi-stable crystal structures of bilayer group-IV materials except for graphene, mainly owing to very complex intralayer/interlayer multi-orbital hybridizations, prominent buckling structures, and ferromagnetic/anti-ferromagnetic spin configurations. The VASP simulations are available in fully exploring the various ground state energies and the featured electronic, optical and magnetic properties. However, the stacking-dependent tight-binding models cannot be obtained from the well-fitting with the VASP calculations, since the low-lying valence and conduction bands are predicted to exhibit the abnormal energy dispersion relations. How to efficiently deal with the diverse quasi-particle behaviors in non-graphene group-IV materials will become the near-future studying focuses, esfpecially for silicon- and germanium-related semiconductors.
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U2 - 10.1016/B978-0-443-15801-8.00005-0
DO - 10.1016/B978-0-443-15801-8.00005-0
M3 - Chapter
AN - SCOPUS:85163541213
SN - 9780443158025
SP - 491
EP - 519
BT - Fundamental Physicochemical Properties of Germanene-related Materials
PB - Elsevier
ER -