Open issues and future challenges

Thi Dieu Hien Nguyen, Shih Yang Lin, Vo Khuong Dien, Chi Hsuan Lee, Hsin Yi Liu, Hai Duong Pham, Thi My Duyen Huynh, Nguyen Thi Han, Ngoc Thanh Thuy Tran, Wei Bang Li, Ming Fa Lin

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The unsolved and emergent research topics are clearly presented in this chapter. Certain of them will be worthy of the systematic investigations, such as, the germanium-/silicon-related solar cells, batteries and intermetallics, and the reliable establishment of the tight-binding models/the generalized tight binding model in the absence/presence of external fields. For example, it is almost impossible to synthesize and examine all the quasi-stable crystal structures of bilayer group-IV materials except for graphene, mainly owing to very complex intralayer/interlayer multi-orbital hybridizations, prominent buckling structures, and ferromagnetic/anti-ferromagnetic spin configurations. The VASP simulations are available in fully exploring the various ground state energies and the featured electronic, optical and magnetic properties. However, the stacking-dependent tight-binding models cannot be obtained from the well-fitting with the VASP calculations, since the low-lying valence and conduction bands are predicted to exhibit the abnormal energy dispersion relations. How to efficiently deal with the diverse quasi-particle behaviors in non-graphene group-IV materials will become the near-future studying focuses, esfpecially for silicon- and germanium-related semiconductors.

Original languageEnglish
Title of host publicationFundamental Physicochemical Properties of Germanene-related Materials
PublisherElsevier
Pages491-519
Number of pages29
ISBN (Electronic)9780443158018
ISBN (Print)9780443158025
DOIs
Publication statusPublished - 2023 Jan 1

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Materials Science

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