Operation of multi-level phase change memory using various programming techniques

Jun Tin Lin; Yi Bo Liao; Meng Hsueh Chiang; Wei Chou Hsu

doi:10.1109/ICICDT.2009.5166295

Operation of multi-level phase change memory using various programming techniques

Jun Tin Lin, Yi Bo Liao, Meng Hsueh Chiang, Wei Chou Hsu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Citations (Scopus)

Abstract

In this paper, we evaluate the writing operation of multi-level phase change memory by using different programming techniques including proposed monotonically increasing and decreasing pulse, constant pulse, and slow quenching schemes. Our simulation results suggest that the proposed multi-level cell schemes not only have an advantage in density but also consume less power during writing operation.

Original language	English
Title of host publication	2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009
Pages	199-202
Number of pages	4
DOIs	https://doi.org/10.1109/ICICDT.2009.5166295
Publication status	Published - 2009
Event	2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009 - Austin, TX, United States Duration: 2009 May 18 → 2009 May 20

Publication series

Name	2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009

Other

Other	2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009
Country/Territory	United States
City	Austin, TX
Period	09-05-18 → 09-05-20

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ICICDT.2009.5166295

Cite this

Lin, J. T., Liao, Y. B., Chiang, M. H., & Hsu, W. C. (2009). Operation of multi-level phase change memory using various programming techniques. In 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009 (pp. 199-202). Article 5166295 (2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009). https://doi.org/10.1109/ICICDT.2009.5166295

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title = "Operation of multi-level phase change memory using various programming techniques",

abstract = "In this paper, we evaluate the writing operation of multi-level phase change memory by using different programming techniques including proposed monotonically increasing and decreasing pulse, constant pulse, and slow quenching schemes. Our simulation results suggest that the proposed multi-level cell schemes not only have an advantage in density but also consume less power during writing operation.",

author = "Lin, {Jun Tin} and Liao, {Yi Bo} and Chiang, {Meng Hsueh} and Hsu, {Wei Chou}",

year = "2009",

doi = "10.1109/ICICDT.2009.5166295",

language = "English",

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series = "2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009",

pages = "199--202",

booktitle = "2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009",

note = "2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009 ; Conference date: 18-05-2009 Through 20-05-2009",

}

Lin, JT, Liao, YB, Chiang, MH & Hsu, WC 2009, Operation of multi-level phase change memory using various programming techniques. in 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009., 5166295, 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009, pp. 199-202, 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009, Austin, TX, United States, 09-05-18. https://doi.org/10.1109/ICICDT.2009.5166295

Operation of multi-level phase change memory using various programming techniques. / Lin, Jun Tin; Liao, Yi Bo; Chiang, Meng Hsueh et al.
2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009. 2009. p. 199-202 5166295 (2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - In this paper, we evaluate the writing operation of multi-level phase change memory by using different programming techniques including proposed monotonically increasing and decreasing pulse, constant pulse, and slow quenching schemes. Our simulation results suggest that the proposed multi-level cell schemes not only have an advantage in density but also consume less power during writing operation.

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Y2 - 18 May 2009 through 20 May 2009

ER -

Operation of multi-level phase change memory using various programming techniques

Abstract

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