Optical and electrical characteristics of CO2-laser-treated Mg-doped GaN film

Wei Chih Lai; Meiso Yokoyama; Shoou Jinn Chang; Jan Dar Guo; Chia Hon Sheu; Tsung Yu Chen; Wen Chung Tsai; Jian Shihn Tsang; Shih Hsiung Chan; Simon M. Sze

doi:10.1143/jjap.39.l1138

Optical and electrical characteristics of CO₂-laser-treated Mg-doped GaN film

Wei Chih Lai, Meiso Yokoyama, Shoou Jinn Chang, Jan Dar Guo, Chia Hon Sheu, Tsung Yu Chen, Wen Chung Tsai, Jian Shihn Tsang, Shih Hsiung Chan, Simon M. Sze

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

This work investigates the optical and electrical characteristics of CO₂-laser annealed Mg-doped GaN films to activate Mg-doped p-type GaN films. Results obtained from the CO₂ laser annealing investigation were similar to those of thermal annealing or low energy electron beam irradiation (LEEBI) treatment to activate the Mg-doped p-GaN films. The room-temperature photoluminescence (PL) intensity of the blue emission of the Mg-doped GaN film after 10 W laser annealing was approximately ten times stronger than that of the as-grown film. The resistivity of the Mg-doped GaN film decreased from 10⁵ Ω·cm to 2-3 Ω·cm as the laser annealing power rose above 6 W. The hole concentration of Mg-doped GaN film was approximately 1×10¹⁷ cm^-3 when the laser annealing power was 7.5 W.

Original language	English
Pages (from-to)	L1138-L1140
Journal	Japanese journal of applied physics
Volume	39
Issue number	11 B
DOIs	https://doi.org/10.1143/jjap.39.l1138
Publication status	Published - 2000 Nov 15

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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title = "Optical and electrical characteristics of CO2-laser-treated Mg-doped GaN film",

abstract = "This work investigates the optical and electrical characteristics of CO2-laser annealed Mg-doped GaN films to activate Mg-doped p-type GaN films. Results obtained from the CO2 laser annealing investigation were similar to those of thermal annealing or low energy electron beam irradiation (LEEBI) treatment to activate the Mg-doped p-GaN films. The room-temperature photoluminescence (PL) intensity of the blue emission of the Mg-doped GaN film after 10 W laser annealing was approximately ten times stronger than that of the as-grown film. The resistivity of the Mg-doped GaN film decreased from 105 Ω·cm to 2-3 Ω·cm as the laser annealing power rose above 6 W. The hole concentration of Mg-doped GaN film was approximately 1×1017 cm-3 when the laser annealing power was 7.5 W.",

author = "Lai, {Wei Chih} and Meiso Yokoyama and Chang, {Shoou Jinn} and Guo, {Jan Dar} and Sheu, {Chia Hon} and Chen, {Tsung Yu} and Tsai, {Wen Chung} and Tsang, {Jian Shihn} and Chan, {Shih Hsiung} and Sze, {Simon M.}",

year = "2000",

month = nov,

day = "15",

doi = "10.1143/jjap.39.l1138",

language = "English",

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TY - JOUR

T1 - Optical and electrical characteristics of CO2-laser-treated Mg-doped GaN film

AU - Lai, Wei Chih

AU - Yokoyama, Meiso

AU - Chang, Shoou Jinn

AU - Guo, Jan Dar

AU - Sheu, Chia Hon

AU - Chen, Tsung Yu

AU - Tsai, Wen Chung

AU - Tsang, Jian Shihn

AU - Chan, Shih Hsiung

AU - Sze, Simon M.

PY - 2000/11/15

Y1 - 2000/11/15

N2 - This work investigates the optical and electrical characteristics of CO2-laser annealed Mg-doped GaN films to activate Mg-doped p-type GaN films. Results obtained from the CO2 laser annealing investigation were similar to those of thermal annealing or low energy electron beam irradiation (LEEBI) treatment to activate the Mg-doped p-GaN films. The room-temperature photoluminescence (PL) intensity of the blue emission of the Mg-doped GaN film after 10 W laser annealing was approximately ten times stronger than that of the as-grown film. The resistivity of the Mg-doped GaN film decreased from 105 Ω·cm to 2-3 Ω·cm as the laser annealing power rose above 6 W. The hole concentration of Mg-doped GaN film was approximately 1×1017 cm-3 when the laser annealing power was 7.5 W.

AB - This work investigates the optical and electrical characteristics of CO2-laser annealed Mg-doped GaN films to activate Mg-doped p-type GaN films. Results obtained from the CO2 laser annealing investigation were similar to those of thermal annealing or low energy electron beam irradiation (LEEBI) treatment to activate the Mg-doped p-GaN films. The room-temperature photoluminescence (PL) intensity of the blue emission of the Mg-doped GaN film after 10 W laser annealing was approximately ten times stronger than that of the as-grown film. The resistivity of the Mg-doped GaN film decreased from 105 Ω·cm to 2-3 Ω·cm as the laser annealing power rose above 6 W. The hole concentration of Mg-doped GaN film was approximately 1×1017 cm-3 when the laser annealing power was 7.5 W.

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SN - 0021-4922

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SP - L1138-L1140

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 11 B

ER -

Optical and electrical characteristics of CO₂-laser-treated Mg-doped GaN film

Abstract

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