Optical and electrical characteristics of ZnO films grown on nitridated Si (1 0 0) substrate with GaN and ZnO double buffer layers

S. P. Chang, R. W. Chuang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, C. F. Kuo, H. M. Chang

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2 Citations (Scopus)

Abstract

The optical and electrical characteristics of zinc oxide (ZnO) films grown by molecular-beam epitaxy (MBE) on Si substrates were investigated. ZnO epitaxial layer was successfully grown on nitridated Si (1 0 0) substrate initially covered with high-temperature GaN and low-temperature ZnO double buffer layers using MBE. X-ray diffraction and photoluminescence results both indicated that a reasonable quality of ZnO epitaxial layer was obtained. As the CV measurement had indicated, the carrier concentration was reduced virtually in a linear fashion from ZnO surface down to GaN buffer layer. A reduction in electron concentration was caused by the carrier depletion due to the presence of the Schottky barrier of Ni/ZnO. The large density of electron accumulated at the ZnO/GaN interface was due to the large conduction band discontinuity and offset.

Original languageEnglish
Pages (from-to)1058-1063
Number of pages6
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume14
Issue number4
DOIs
Publication statusPublished - 2008 Jul 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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