Optical and electrical properties of μ-Slice InGaN/GaN light emitting diodes shaped by focused ion beam process

Che Kang Hsu, Jinn Kong Sheu, Jia Kuen Wang, Ming Lun Lee, Kuo Hua Chang, Shang Ju Tu, Wei Chih Lai

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, slice-type GaN-based light-emitting diodes (μ-slice LEDs) scaled down to a few micrometers using focused ion beam (FIB) process were demonstrated. Electroluminescence peak wavelengths (λp) of the single μ-slice LEDs were nearly independent of driving current density due to the fact that the effects of joule heating and band filling on the shift of λp compete with each other. The smaller full width of half maximum of electroluminescence peaks observed from the 7mu;-slice LEDs could result from the effect of strain release after the FIB process and thermal annealing during the FIB process on sliced structures

Original languageEnglish
Article number032104
JournalApplied Physics Express
Volume4
Issue number3
DOIs
Publication statusPublished - 2011 Mar 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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