Optical and Electrical Properties of Mo-doped Zr:ZnO Multilayer Thin Films for Photosensor Applications

Ming Yu Yen; Tao Hsing Chen; Po Hsun Lai; Sheng Lung Tu; Yun Hwei Shen

doi:10.18494/SAM3713

Optical and Electrical Properties of Mo-doped Zr:ZnO Multilayer Thin Films for Photosensor Applications

Ming Yu Yen, Tao Hsing Chen, Po Hsun Lai, Sheng Lung Tu, Yun Hwei Shen

Department of Resources Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We investigated the structural, optical, and electrical properties of molybdenum and zirconium-doped zinc oxide (ZZO) with a purity of 99.99% deposited on a glass substrate by radio-frequency magnetron sputtering and annealed at different temperatures. The doping amount of zirconium on ZnO was 3 wt%. The optimal resistivity of the multilayers, 5.1 × 10^-3 Ω-cm, was observed for an annealing temperature of 400 °C. This film also had the highest transmittance of 93%. Moreover, the optimal figure of merit, 4.6 × 10^-6 Ω^-1, was observed for an annealing temperature of 400 °C. Furthermore, the grain size also increased with the annealing temperature, as observed by scanning electron microscopy. Mo/ZZO multilayer thin films with such excellent optical and electrical properties can be applied in photosensors.

Original language	English
Pages (from-to)	2015-2023
Number of pages	9
Journal	Sensors and Materials
Volume	34
Issue number	6
DOIs	https://doi.org/10.18494/SAM3713
Publication status	Published - 2022

All Science Journal Classification (ASJC) codes

Instrumentation
General Materials Science

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@article{97d47cd0a7304ff38ce7dd468fc3dc37,

title = "Optical and Electrical Properties of Mo-doped Zr:ZnO Multilayer Thin Films for Photosensor Applications",

abstract = "We investigated the structural, optical, and electrical properties of molybdenum and zirconium-doped zinc oxide (ZZO) with a purity of 99.99% deposited on a glass substrate by radio-frequency magnetron sputtering and annealed at different temperatures. The doping amount of zirconium on ZnO was 3 wt%. The optimal resistivity of the multilayers, 5.1 × 10-3 Ω-cm, was observed for an annealing temperature of 400 °C. This film also had the highest transmittance of 93%. Moreover, the optimal figure of merit, 4.6 × 10-6 Ω-1, was observed for an annealing temperature of 400 °C. Furthermore, the grain size also increased with the annealing temperature, as observed by scanning electron microscopy. Mo/ZZO multilayer thin films with such excellent optical and electrical properties can be applied in photosensors.",

author = "Yen, {Ming Yu} and Chen, {Tao Hsing} and Lai, {Po Hsun} and Tu, {Sheng Lung} and Shen, {Yun Hwei}",

note = "Funding Information: This paper is a product of a research project supported by the Ministry of Science and Technology (Project No. MOST 110-2628-E-992-002). The authors would like to express their gratitude to the Ministry of Science and Technology, the support of which enabled this research to be conducted smoothly. Publisher Copyright: {\textcopyright} MYU K.K.",

year = "2022",

doi = "10.18494/SAM3713",

language = "English",

volume = "34",

pages = "2015--2023",

journal = "Sensors and Materials",

issn = "0914-4935",

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TY - JOUR

T1 - Optical and Electrical Properties of Mo-doped Zr:ZnO Multilayer Thin Films for Photosensor Applications

AU - Yen, Ming Yu

AU - Chen, Tao Hsing

AU - Lai, Po Hsun

AU - Tu, Sheng Lung

AU - Shen, Yun Hwei

N1 - Funding Information: This paper is a product of a research project supported by the Ministry of Science and Technology (Project No. MOST 110-2628-E-992-002). The authors would like to express their gratitude to the Ministry of Science and Technology, the support of which enabled this research to be conducted smoothly. Publisher Copyright: © MYU K.K.

PY - 2022

Y1 - 2022

N2 - We investigated the structural, optical, and electrical properties of molybdenum and zirconium-doped zinc oxide (ZZO) with a purity of 99.99% deposited on a glass substrate by radio-frequency magnetron sputtering and annealed at different temperatures. The doping amount of zirconium on ZnO was 3 wt%. The optimal resistivity of the multilayers, 5.1 × 10-3 Ω-cm, was observed for an annealing temperature of 400 °C. This film also had the highest transmittance of 93%. Moreover, the optimal figure of merit, 4.6 × 10-6 Ω-1, was observed for an annealing temperature of 400 °C. Furthermore, the grain size also increased with the annealing temperature, as observed by scanning electron microscopy. Mo/ZZO multilayer thin films with such excellent optical and electrical properties can be applied in photosensors.

AB - We investigated the structural, optical, and electrical properties of molybdenum and zirconium-doped zinc oxide (ZZO) with a purity of 99.99% deposited on a glass substrate by radio-frequency magnetron sputtering and annealed at different temperatures. The doping amount of zirconium on ZnO was 3 wt%. The optimal resistivity of the multilayers, 5.1 × 10-3 Ω-cm, was observed for an annealing temperature of 400 °C. This film also had the highest transmittance of 93%. Moreover, the optimal figure of merit, 4.6 × 10-6 Ω-1, was observed for an annealing temperature of 400 °C. Furthermore, the grain size also increased with the annealing temperature, as observed by scanning electron microscopy. Mo/ZZO multilayer thin films with such excellent optical and electrical properties can be applied in photosensors.

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VL - 34

SP - 2015

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JO - Sensors and Materials

JF - Sensors and Materials

IS - 6

ER -

Optical and Electrical Properties of Mo-doped Zr:ZnO Multilayer Thin Films for Photosensor Applications

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