Optical and photo-electrical properties of zinc tin oxide thin-film phototransistor

Chen Chuan Yang; Wan Ju Tung; Sheng Po Chang; Ming Hung Hsu; Wei Lun Huang; Cheng Hsun Li; Yu Jui Fang; Shoou Jinn Chang

doi:10.1109/ISNE.2018.8394646

Optical and photo-electrical properties of zinc tin oxide thin-film phototransistor

Chen Chuan Yang, Wan Ju Tung, Sheng Po Chang, Ming Hung Hsu, Wei Lun Huang, Cheng Hsun Li, Yu Jui Fang, Shoou Jinn Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We investigated the optical and electrical properties of the zinc tin oxide (ZTO) thin-film phototransistors. The device has a threshold voltage of 0.48 V, field effect mobility of 1.47 cm²/Vs in the saturation region, on/off drain current ratio of 2×10⁶, and subthreshold swing of 0.45 V/decade under dark environment. As an UV photodetector, the device has a responsivity of 0.329 A/W and a rejection ratio of 3.19×10⁴ at a gate voltage of -15 V under illumination of wavelength 300 nm.

Original language	English
Title of host publication	Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781538614457
DOIs	https://doi.org/10.1109/ISNE.2018.8394646
Publication status	Published - 2018 Jun 22
Event	7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan Duration: 2018 May 7 → 2018 May 9

Publication series

Name	Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Other

Other	7th International Symposium on Next-Generation Electronics, ISNE 2018
Country	Taiwan
City	Taipei
Period	18-05-07 → 18-05-09

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All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

Cite this

Yang, C. C., Tung, W. J., Chang, S. P., Hsu, M. H., Huang, W. L., Li, C. H., Fang, Y. J., & Chang, S. J. (2018). Optical and photo-electrical properties of zinc tin oxide thin-film phototransistor. In Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018 (pp. 1-2). (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2018.8394646

Yang, Chen Chuan ; Tung, Wan Ju ; Chang, Sheng Po ; Hsu, Ming Hung ; Huang, Wei Lun ; Li, Cheng Hsun ; Fang, Yu Jui ; Chang, Shoou Jinn. / Optical and photo-electrical properties of zinc tin oxide thin-film phototransistor. Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-2 (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018).

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title = "Optical and photo-electrical properties of zinc tin oxide thin-film phototransistor",

abstract = "We investigated the optical and electrical properties of the zinc tin oxide (ZTO) thin-film phototransistors. The device has a threshold voltage of 0.48 V, field effect mobility of 1.47 cm2/Vs in the saturation region, on/off drain current ratio of 2×106, and subthreshold swing of 0.45 V/decade under dark environment. As an UV photodetector, the device has a responsivity of 0.329 A/W and a rejection ratio of 3.19×104 at a gate voltage of -15 V under illumination of wavelength 300 nm.",

author = "Yang, {Chen Chuan} and Tung, {Wan Ju} and Chang, {Sheng Po} and Hsu, {Ming Hung} and Huang, {Wei Lun} and Li, {Cheng Hsun} and Fang, {Yu Jui} and Chang, {Shoou Jinn}",

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Yang, CC, Tung, WJ, Chang, SP, Hsu, MH, Huang, WL, Li, CH, Fang, YJ & Chang, SJ 2018, Optical and photo-electrical properties of zinc tin oxide thin-film phototransistor. in Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 7th International Symposium on Next-Generation Electronics, ISNE 2018, Taipei, Taiwan, 18-05-07. https://doi.org/10.1109/ISNE.2018.8394646

Optical and photo-electrical properties of zinc tin oxide thin-film phototransistor. / Yang, Chen Chuan; Tung, Wan Ju; Chang, Sheng Po; Hsu, Ming Hung; Huang, Wei Lun; Li, Cheng Hsun; Fang, Yu Jui; Chang, Shoou Jinn.

Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-2 (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Yang, Chen Chuan

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N2 - We investigated the optical and electrical properties of the zinc tin oxide (ZTO) thin-film phototransistors. The device has a threshold voltage of 0.48 V, field effect mobility of 1.47 cm2/Vs in the saturation region, on/off drain current ratio of 2×106, and subthreshold swing of 0.45 V/decade under dark environment. As an UV photodetector, the device has a responsivity of 0.329 A/W and a rejection ratio of 3.19×104 at a gate voltage of -15 V under illumination of wavelength 300 nm.

AB - We investigated the optical and electrical properties of the zinc tin oxide (ZTO) thin-film phototransistors. The device has a threshold voltage of 0.48 V, field effect mobility of 1.47 cm2/Vs in the saturation region, on/off drain current ratio of 2×106, and subthreshold swing of 0.45 V/decade under dark environment. As an UV photodetector, the device has a responsivity of 0.329 A/W and a rejection ratio of 3.19×104 at a gate voltage of -15 V under illumination of wavelength 300 nm.

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Yang CC, Tung WJ, Chang SP, Hsu MH, Huang WL, Li CH et al. Optical and photo-electrical properties of zinc tin oxide thin-film phototransistor. In Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-2. (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). https://doi.org/10.1109/ISNE.2018.8394646

Access to Document

10.1109/ISNE.2018.8394646