@inproceedings{b4f93b53135b4413b19714b9abeea496,
title = "Optical and photo-electrical properties of zinc tin oxide thin-film phototransistor",
abstract = "We investigated the optical and electrical properties of the zinc tin oxide (ZTO) thin-film phototransistors. The device has a threshold voltage of 0.48 V, field effect mobility of 1.47 cm2/Vs in the saturation region, on/off drain current ratio of 2×106, and subthreshold swing of 0.45 V/decade under dark environment. As an UV photodetector, the device has a responsivity of 0.329 A/W and a rejection ratio of 3.19×104 at a gate voltage of -15 V under illumination of wavelength 300 nm.",
author = "Yang, {Chen Chuan} and Tung, {Wan Ju} and Chang, {Sheng Po} and Hsu, {Ming Hung} and Huang, {Wei Lun} and Li, {Cheng Hsun} and Fang, {Yu Jui} and Chang, {Shoou Jinn}",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.; 7th International Symposium on Next-Generation Electronics, ISNE 2018 ; Conference date: 07-05-2018 Through 09-05-2018",
year = "2018",
month = jun,
day = "22",
doi = "10.1109/ISNE.2018.8394646",
language = "English",
series = "Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--2",
booktitle = "Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018",
address = "United States",
}