Optical and photo-electrical properties of zinc tin oxide thin-film phototransistor

Chen Chuan Yang, Wan Ju Tung, Sheng Po Chang, Ming Hung Hsu, Wei Lun Huang, Cheng Hsun Li, Yu Jui Fang, Shoou Jinn Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We investigated the optical and electrical properties of the zinc tin oxide (ZTO) thin-film phototransistors. The device has a threshold voltage of 0.48 V, field effect mobility of 1.47 cm2/Vs in the saturation region, on/off drain current ratio of 2×106, and subthreshold swing of 0.45 V/decade under dark environment. As an UV photodetector, the device has a responsivity of 0.329 A/W and a rejection ratio of 3.19×104 at a gate voltage of -15 V under illumination of wavelength 300 nm.

Original languageEnglish
Title of host publicationProceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538614457
DOIs
Publication statusPublished - 2018 Jun 22
Event7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan
Duration: 2018 May 72018 May 9

Publication series

NameProceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Other

Other7th International Symposium on Next-Generation Electronics, ISNE 2018
CountryTaiwan
CityTaipei
Period18-05-0718-05-09

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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