Optical and structural studies of relaxation in SI1-xGEx SI strained-layer superlattices

S. M. Prokes, O. J. Glembocki, K. L. Wang

Research output: Contribution to journalArticlepeer-review

Abstract

Asymmetrically and symmetrically strained Si SiGe superlattices were grown on Si(001) by Molecular Beam Epitaxy (MBE) and studied as a function of thermal treatments. X-ray diffraction was used to monitor the extent of interdiffusion with annealing time and temperature and results indicate that initially the interdiffusion is very rapid and non-linear, but later a steady-state regime is attained. Raman spectroscopy has shown that in the very early heating stages, strain relaxation occurs predominantly by interdiffusion, and Ge diffusion can be enhanced by strain. The results also indicate that a significant contribution to the interdiffusion occurs by an interstitial-type mechanism.

Original languageEnglish
Pages (from-to)113-118
Number of pages6
JournalSuperlattices and Microstructures
Volume10
Issue number1
DOIs
Publication statusPublished - 1991

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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