The optical properties of two-dimensional electron gas (2DEG) in single and multiple AlxGa1-xN/GaN heterostructures were investigated by means of photoluminescence (PL), temperature dependent PL, power dependent PL. A strong GaN band edge emission and its longitudinal optical (LO) phonon replicas were observed for all the samples. The PL peaks related to recombination between the 2DEG and photogenerated hole are observed at ∼ 3.45 eV for single AlxGa1-xN/GaN heterostructures and at ∼ 3.425 and ø 3.45 eV for multiple AlxGa 1-xN/GaN heterostructures. The LO phonon replicas of the 2DEG emission were also clearly observed. The 2DEG-related emission intensity decreased with increasing temperature and disappeared at temperatures above 150 K. A possible origin of the appearance of 2DEG-related emissions in single and multiple AlGaN/GaN heterostructures has been discussed.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2006|
|Event||6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany|
Duration: 2005 Aug 28 → 2005 Sep 2
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics