Optical characterization of InAlAs/InGaAs metamorphic high-electron mobility transistor structures with tensile and compressive strain

Ching Hsiang Chan, Ching Hwa Ho, Ming Kai Chen, Yu Shyan Lin, Ying Sheng Huang, Wei-Chou Hsu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have measured surface photovoltage (SPV), photoreflectance (PR), and photoluminescence (PL) spectra of two InAlAs/InxGa 1 - xAs/InAlAs metamorphic high-electron mobility transistor (MHEMT) structures. One possesses a V-shaped InxGa1 - xAs (x = 0.3-0.5-0.3) tensile-strained channel in In0.5Al0.5As/ InxGa1 - xAs/In0.5Al0.5As heterostructures, and the other is an In0.42Al0.58As/ In0.53Ga0.47As/In0.42Al0.58As MHEMT structures with InxGa1 - xAs (x = 0.53) compressively-strained channel grown on GaAs by molecular beam epitaxy. The comparison of SPV, PR, and PL spectra facilitates the identification of channel-well transitions in the MHEMT structures with different In xGa1 - xAs channels. Inter-subband transitions, Fermi-level energies, and built-in electric field of the two MHEMT structures with dissimilar InxGa1 - xAs channel are evaluated and discussed from the experimental analyses of SPV, PR and PL measurements. The results showed that the design of tensile-strained MHEMT structure enhances sheet-carrier density and avoids surface-roughness scattering by increasing V-shape electric field between the two channel interfaces. The electron mobility of the tensile-strained MHEMT structure is hence being promoted.

Original languageEnglish
Pages (from-to)217-221
Number of pages5
JournalThin Solid Films
Volume529
DOIs
Publication statusPublished - 2013 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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