Optical phonons in self-assembled Ge quantum dot superlattices: Strain relaxation effects

J. L. Liu; J. Wan; Z. M. Jiang; A. Khitun; K. L. Wang; D. P. Yu

doi:10.1063/1.1518756

Optical phonons in self-assembled Ge quantum dot superlattices: Strain relaxation effects

J. L. Liu, J. Wan, Z. M. Jiang, A. Khitun, K. L. Wang, D. P. Yu

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

Raman scattering by optical phonons was studied in self-assembled Ge quantum dot superlattices. It was found that the GeGe optical phonon frequency was mainly caused by strain relaxation effects. The comparison of experimental and calculated results indicated that the strain relaxation of Ge quantum dot superlattices was not only due to atomic intermixing but also from the morphology transition in dot formation.

Original language	English
Pages (from-to)	6804-6808
Number of pages	5
Journal	Journal of Applied Physics
Volume	92
Issue number	11
DOIs	https://doi.org/10.1063/1.1518756
Publication status	Published - 2002 Dec 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.1518756

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abstract = "Raman scattering by optical phonons was studied in self-assembled Ge quantum dot superlattices. It was found that the GeGe optical phonon frequency was mainly caused by strain relaxation effects. The comparison of experimental and calculated results indicated that the strain relaxation of Ge quantum dot superlattices was not only due to atomic intermixing but also from the morphology transition in dot formation.",

author = "Liu, {J. L.} and J. Wan and Jiang, {Z. M.} and A. Khitun and Wang, {K. L.} and Yu, {D. P.}",

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T1 - Optical phonons in self-assembled Ge quantum dot superlattices

T2 - Strain relaxation effects

AU - Liu, J. L.

AU - Wan, J.

AU - Jiang, Z. M.

AU - Khitun, A.

AU - Wang, K. L.

AU - Yu, D. P.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - Raman scattering by optical phonons was studied in self-assembled Ge quantum dot superlattices. It was found that the GeGe optical phonon frequency was mainly caused by strain relaxation effects. The comparison of experimental and calculated results indicated that the strain relaxation of Ge quantum dot superlattices was not only due to atomic intermixing but also from the morphology transition in dot formation.

AB - Raman scattering by optical phonons was studied in self-assembled Ge quantum dot superlattices. It was found that the GeGe optical phonon frequency was mainly caused by strain relaxation effects. The comparison of experimental and calculated results indicated that the strain relaxation of Ge quantum dot superlattices was not only due to atomic intermixing but also from the morphology transition in dot formation.

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ER -

Optical phonons in self-assembled Ge quantum dot superlattices: Strain relaxation effects

Abstract

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