Optical phonons in self-assembled Ge quantum dot superlattices: Strain relaxation effects

J. L. Liu, J. Wan, Z. M. Jiang, A. Khitun, K. L. Wang, D. P. Yu

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)

Abstract

Raman scattering by optical phonons was studied in self-assembled Ge quantum dot superlattices. It was found that the GeGe optical phonon frequency was mainly caused by strain relaxation effects. The comparison of experimental and calculated results indicated that the strain relaxation of Ge quantum dot superlattices was not only due to atomic intermixing but also from the morphology transition in dot formation.

Original languageEnglish
Pages (from-to)6804-6808
Number of pages5
JournalJournal of Applied Physics
Volume92
Issue number11
DOIs
Publication statusPublished - 2002 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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