Optical properties and deep levels in annealed Si1-xMnx bulk materials

Y. H. Kwon, T. W. Kang, C. J. Park, H. Y. Cho, T. W. Kim, J. Y. Lee, Kang L. Wang, B. O. Kim, S. M. Kim, Yong Hoon Cho

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1 Citation (Scopus)

Abstract

The optical properties and the deep levels in bulk Si1-xMnx formed by using an implantation and annealing method were investigated. Transmission electron microscopy, X-ray diffraction, and Hall-effect measurements showed that the annealed bulk Si1-xMnx samples were p-type crystalline semiconductors. The photoluminescence spectra for the annealed bulk Si1-xMnx material showed luminescence peaks corresponding to excitons bound to neutral acceptors and related to dislocations due to the existence of Mn impurities. Deep-level transient spectroscopy results for the annealed bulk Si1-xMnx showed deep levels related to the interstitial and substitutial sites of the Mn+ ions. These results can help improve understanding of the optical properties and the deep levels in annealed bulk Si1-xMnx material.

Original languageEnglish
Pages (from-to)14-17
Number of pages4
JournalSolid State Communications
Volume140
Issue number1
DOIs
Publication statusPublished - 2006 Oct

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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