Optical properties in InGaN/GaN multiple quantum wells and blue LEDs

Y. K. Su, G. C. Chi, J. K. Sheu

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

InGaN/GaN multiple quantum wells (MQW) and blue MQW light-emitting diodes were grown by metalorganic vapor phase epitaxy (MOVPE). Band gap narrowing of the PL spectra for the InGaN/GaN MQW LEDs can be observed at room temperature. In addition, the emission wavelength of EL and PL spectra for the MQW blue LEDs exhibits a blue-shift phenomenon when increasing the injection current and laser power, respectively. This luminescence behavior can tentatively be understood as a competition between a spectral red-shift mechanism of piezoelectricity-induced quantum-confined Start effect (PQCSE) and a blue-shift mechanism of band-filling and charge screening effects. Blue MQW LEDs emitting at 465 nm have been successfully fabricated with a narrow FWHM of about 30 nm at 20 mA. The output power of bare chips is better than 1 mA at 20 mA and the forward voltages are less than 3.8 V.

Original languageEnglish
Pages (from-to)205-209
Number of pages5
JournalOptical Materials
Volume14
Issue number3
DOIs
Publication statusPublished - 2000 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

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