Abstract
InGaN/GaN multiple quantum wells (MQW) and blue MQW light-emitting diodes were grown by metalorganic vapor phase epitaxy (MOVPE). Band gap narrowing of the PL spectra for the InGaN/GaN MQW LEDs can be observed at room temperature. In addition, the emission wavelength of EL and PL spectra for the MQW blue LEDs exhibits a blue-shift phenomenon when increasing the injection current and laser power, respectively. This luminescence behavior can tentatively be understood as a competition between a spectral red-shift mechanism of piezoelectricity-induced quantum-confined Start effect (PQCSE) and a blue-shift mechanism of band-filling and charge screening effects. Blue MQW LEDs emitting at 465 nm have been successfully fabricated with a narrow FWHM of about 30 nm at 20 mA. The output power of bare chips is better than 1 mA at 20 mA and the forward voltages are less than 3.8 V.
Original language | English |
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Pages (from-to) | 205-209 |
Number of pages | 5 |
Journal | Optical Materials |
Volume | 14 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2000 Jul |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Computer Science(all)
- Atomic and Molecular Physics, and Optics
- Spectroscopy
- Physical and Theoretical Chemistry
- Organic Chemistry
- Inorganic Chemistry
- Electrical and Electronic Engineering