Optical properties of Ge/Si quantum dot superlattices

Zheng Yang; Yi Shi; Jianlin Liu; Bo Yan; Rong Zhang; Youdou Zheng; Kanglong Wang

doi:10.1016/j.matlet.2004.08.016

Optical properties of Ge/Si quantum dot superlattices

Zheng Yang, Yi Shi, Jianlin Liu, Bo Yan, Rong Zhang, Youdou Zheng, Kanglong Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Self-assembled Ge/Si quantum dot (QD) superlatlices (SLs) were grown by a solid-source molecular beam epitaxy (MBE) system with the Stranski-Kranstanov (SK) growth mode. Atomic force microscope (AFM) and transmission electron microscope (TEM) characterizations of the samples were presented. Photoluminescence (PL) and Raman scattering measurements were carried out. The temperature dependence of the PL intensity has been reported and fitted by the Arrhenius and Berthelot type function. Some valuable parameters were obtained through the fitted curves, one of which was closely related to the dimension and effective mass of electron of the QDs.

Original language	English
Pages (from-to)	3765-3768
Number of pages	4
Journal	Materials Letters
Volume	58
Issue number	29
DOIs	https://doi.org/10.1016/j.matlet.2004.08.016
Publication status	Published - 2004 Nov

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{925aa85490754ce09374fcfc3b1f6797,

title = "Optical properties of Ge/Si quantum dot superlattices",

abstract = "Self-assembled Ge/Si quantum dot (QD) superlatlices (SLs) were grown by a solid-source molecular beam epitaxy (MBE) system with the Stranski-Kranstanov (SK) growth mode. Atomic force microscope (AFM) and transmission electron microscope (TEM) characterizations of the samples were presented. Photoluminescence (PL) and Raman scattering measurements were carried out. The temperature dependence of the PL intensity has been reported and fitted by the Arrhenius and Berthelot type function. Some valuable parameters were obtained through the fitted curves, one of which was closely related to the dimension and effective mass of electron of the QDs.",

author = "Zheng Yang and Yi Shi and Jianlin Liu and Bo Yan and Rong Zhang and Youdou Zheng and Kanglong Wang",

note = "Funding Information: The work in NJU was supported by the National Natural Science Foundation of China under Grant Nos. 90101021 and 60290084 and also in part supported by the National Science Fund for Distinguished Young Scholars under Grant No. 60225014. Yang gratefully acknowledges Yuhua Qu and Lifeng Bian of ISCAS for some help in PL measurements. The work in UCR was supported by DARPA through the Center for Nanoscale Innovation for Defense and Liu thanks Shawn Thomas and Qianghua Xie of Motorola for some TEM characterizations. ",

year = "2004",

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doi = "10.1016/j.matlet.2004.08.016",

language = "English",

volume = "58",

pages = "3765--3768",

journal = "Materials Letters",

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number = "29",

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TY - JOUR

T1 - Optical properties of Ge/Si quantum dot superlattices

AU - Yang, Zheng

AU - Shi, Yi

AU - Liu, Jianlin

AU - Yan, Bo

AU - Zhang, Rong

AU - Zheng, Youdou

AU - Wang, Kanglong

N1 - Funding Information: The work in NJU was supported by the National Natural Science Foundation of China under Grant Nos. 90101021 and 60290084 and also in part supported by the National Science Fund for Distinguished Young Scholars under Grant No. 60225014. Yang gratefully acknowledges Yuhua Qu and Lifeng Bian of ISCAS for some help in PL measurements. The work in UCR was supported by DARPA through the Center for Nanoscale Innovation for Defense and Liu thanks Shawn Thomas and Qianghua Xie of Motorola for some TEM characterizations.

PY - 2004/11

Y1 - 2004/11

N2 - Self-assembled Ge/Si quantum dot (QD) superlatlices (SLs) were grown by a solid-source molecular beam epitaxy (MBE) system with the Stranski-Kranstanov (SK) growth mode. Atomic force microscope (AFM) and transmission electron microscope (TEM) characterizations of the samples were presented. Photoluminescence (PL) and Raman scattering measurements were carried out. The temperature dependence of the PL intensity has been reported and fitted by the Arrhenius and Berthelot type function. Some valuable parameters were obtained through the fitted curves, one of which was closely related to the dimension and effective mass of electron of the QDs.

AB - Self-assembled Ge/Si quantum dot (QD) superlatlices (SLs) were grown by a solid-source molecular beam epitaxy (MBE) system with the Stranski-Kranstanov (SK) growth mode. Atomic force microscope (AFM) and transmission electron microscope (TEM) characterizations of the samples were presented. Photoluminescence (PL) and Raman scattering measurements were carried out. The temperature dependence of the PL intensity has been reported and fitted by the Arrhenius and Berthelot type function. Some valuable parameters were obtained through the fitted curves, one of which was closely related to the dimension and effective mass of electron of the QDs.

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JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

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