Optical properties of Ge/Si quantum dot superlattices

Zheng Yang, Yi Shi, Jianlin Liu, Bo Yan, Rong Zhang, Youdou Zheng, Kanglong Wang

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


Self-assembled Ge/Si quantum dot (QD) superlatlices (SLs) were grown by a solid-source molecular beam epitaxy (MBE) system with the Stranski-Kranstanov (SK) growth mode. Atomic force microscope (AFM) and transmission electron microscope (TEM) characterizations of the samples were presented. Photoluminescence (PL) and Raman scattering measurements were carried out. The temperature dependence of the PL intensity has been reported and fitted by the Arrhenius and Berthelot type function. Some valuable parameters were obtained through the fitted curves, one of which was closely related to the dimension and effective mass of electron of the QDs.

Original languageEnglish
Pages (from-to)3765-3768
Number of pages4
JournalMaterials Letters
Issue number29
Publication statusPublished - 2004 Nov

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Optical properties of Ge/Si quantum dot superlattices'. Together they form a unique fingerprint.

Cite this