Optical properties of InGaN/GaN nanorods fabricated by inductively coupled plasma etching

T. H. Hsueh, J. K. Sheu, Y. H. Chang, H. C. Kuo, S. C. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The fabrication of In0.3Ga0.7N/GaN multiple quantum wells nanorods with diameters of 60-100 nm and their optical characteristics performed by micron photo-luminescence measurements are presented. The photoluminescence (PL) spectra with sharp linewidths of typically 1.5 nm were observed at 4K. The excitation power dependent spectra show that no energy shift was observed for these sharp peaks. Increasing the excitation power instead leads to an occurrence of new, sharp PL peaks at the higher energy tail of the PL spectra, which suggest that excitons are strongly confined in quantum dots-like region or localization centers.

Original languageEnglish
Title of host publication2005 5th IEEE Conference on Nanotechnology
PublisherIEEE Computer Society
Pages320-323
Number of pages4
ISBN (Print)0780391993, 9780780391994
DOIs
Publication statusPublished - 2005
Event2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan
Duration: 2005 Jul 112005 Jul 15

Publication series

Name2005 5th IEEE Conference on Nanotechnology
Volume1

Other

Other2005 5th IEEE Conference on Nanotechnology
CountryJapan
CityNagoya
Period05-07-1105-07-15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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